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參數(shù)資料
| 型號(hào)： | S10xxxH |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | SCR(硅控整流管) |
| 中文描述： | 可控硅（硅控整流管） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 61K |
| 代理商： | S10XXXH |
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
P (W)
360
O
= 180
o
= 120
o
= 90
o
= 60
o
= 30
o
DC
I
(A)
T(AV)
Fig.1 :
Maximum average power dissipation ver-
sus averageon-statecurrent.
0
10
20
30
40
50
60
70
80
90 100 110 120 130
0
2
4
6
8
10
12
I
(A)
T(AV)
= 180
o
DC
Tcase ( C)
Fig.3 :
Averageon-state current versus case tem-
perature.
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Igt
Tj( C)
o
Ih
-40
-20
0
20
40
60
80
100
120 140
Igt[Tj]
Igt[Tj=25 C]
Ih[Tj]
Ih[Tj=25 C]
Fig.5:
Relativevariationof gatetriggercurrent and
holdingcurrent versus junction temperature.
0
20
40
60
80
100
120
140
0
2
4
6
8
10
-95
-100
-105
-110
-115
-120
-125
P (W)
Tcase ( C)
o
= 180
o
Tamb ( C)
Rth = 0 C/W
2.5 C/W
5 C/W
7.5 C/W
Fig.2 :
Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Tcase) for different thermal
resistancesheatsink+ contact.
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0.01
0.1
1
Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)
Fig.4 :
Relative variation of thermal impedance
versuspulse duration.
1
10
100
1000
0
20
40
60
80
100
120
Tj initial = 25 C
Number of cycles
I
(A)
TSM
Fig.6 :
Non repetitivesurge peak on-state current
versusnumber of cycles.
S10xxxH
3/5
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