參數(shù)資料
型號： S1010VS3
元件分類： 晶閘管
英文描述： 10 A, 100 V, SCR, TO-251AA
封裝： VPAK-3
文件頁數(shù)： 3/6頁
文件大?。?/td> 394K
代理商： S1010VS3
Thyristor Product Catalog
2001 Teccor Electronics
http://www.teccor.com
+1 972-580-7777
- 3
Electrical Specification Notes
(1) Pulse width
≤ 10s.
(2) TC = TJ for test conditions in off-state.
(3) For more than one full cycle rating, see Figure 1.2
(4) See Figure 1.1 for VGT vs TC
(5) See Figure 1.6 for IGT vs TC
(6) See Figure 1.5 for IH vs TC
(7) 4.0A devices also have a pulse peak forward current on-state rat-
ing (repetitive) of 75A. This rating applies for operation at 60Hz,
75°C maximum tab (or anode) lead temperature, switching from
80V peak, sinusoidal current pulse width of 10
s minimum, 15s
maximum.
(8) Test conditions as follows:
TC ≤ 80°C, rectangular current waveform; rate-of-rise of current
≤ 10A/s. Rate-of-reversal of current ≤ 5A/s. ITM = 1A (50s
pulse) Repetition Rate = 60pps. VRRM = Rated. VR = 15V mini-
mum, VDRM = Rated. Rate-of-rise reapplied forward blocking volt-
age = 5V/
s. Gate Bias = 0V, 100 (during turn-off time interval)
(9) See Figure 1.3 and 1.4 for current rating at specified operating
case temperature.
General Notes
All measurements are made at 60Hz with a resistive load at an
ambient temperature of +25
°C unless otherwise specified.
Operating temperature range (TJ) is -40°C to +110°C
Storage temperature range (TS) is -65°C to +150°C
Lead solder temperature is a maximum of 230
°C for 10 seconds
maximum; 1/16" (1.59mm) from case.
The case temperature (TC) is measured as shown on dimensional
outline drawings. See mechanical specifications on page 6 of this
data sheet.
IH
IGM
VGRM
PGM
PG(AV)
ITSM
dv/dt
di/dt
tgt
tq
I2t
Holding
Current
Gate Open
Initial on State
Current =
20mA
(6)
mAmps
Peak
Gate
Current
(1)
Amps
Peak
Reverse
Gate
Voltage
Volts
Peak
Gate
Power
Dissipa-
tion
(1)
Watts
Average
Gate
Power
Dissipa-
tion
Watts
Peak
One
Cycle
Surge
(3)(7)(9)
Amps
Critical Rate-of-
Applied Voltage
Volts/
Sec
Maximum
Rate-of-
Change of
On-State
Current
IGT = 150mA
With 0.1
s
Rise Time
Amps/
Sec
Gate
Controlled
Turn-OnTime
Gate
Pulse=10mA
Min.
Width=15
s
≤ 0.1s
Rise Time
Sec
Circuit
Commulated
Turn-Off
Time
(8)
Sec
RMS Surge
(Non-
Repetitive)
On-State
Current
for Period of
8.3ms
for Fusing
Amps2Sec
60Hz
50Hz
TC =
110
°C
MAX
MIN
TYP
MAX
4.0
1.0
6.0
1.0
0.1
30
25
8
50
3.0
50
1.6
6.0
1.0
6.0
1.0
0.1
30
25
8
50
4.0
50
1.6
4.0
1.0
6.0
1.0
0.1
30
25
8
50
3.0
50
1.6
6.0
1.0
6.0
1.0
0.1
30
25
8
50
4.0
50
1.6
4.0
1.0
6.0
1.0
0.1
30
25
8
50
3.0
50
1.6
6.0
1.0
6.0
1.0
0.1
30
25
8
50
4.0
50
1.6
4.0
1.0
6.0
1.0
0.1
30
25
8
50
3.0
50
1.6
6.0
1.0
6.0
1.0
0.1
30
25
8
50
4.0
50
1.6
6.0
1.0
6.0
1.0
0.1
100
83
10
100
4.0
50
41
8.0
1.0
6.0
1.0
0.1
100
83
10
100
5.0
45
41
6.0
1.0
6.0
1.0
0.1
100
83
10
100
4.0
50
41
8.0
1.0
6.0
1.0
0.1
100
83
10
100
5.0
45
41
6.0
1.0
6.0
1.0
0.1
100
83
8
100
4.0
50
41
8.0
1.0
6.0
1.0
0.1
100
83
8
100
5.0
45
41
6.0
1.0
6.0
1.0
0.1
100
83
8
100
4.0
50
41
8.0
1.0
6.0
1.0
0.1
100
83
8
100
5.0
45
41
6.0
1.0
6.0
1.0
0.1
100
83
10
100
4.0
50
41
8.0
1.0
6.0
1.0
0.1
100
83
10
100
5.0
45
41
6.0
1.0
6.0
1.0
0.1
100
83
10
100
4.0
50
41
8.0
1.0
6.0
1.0
0.1
100
83
10
100
5.0
45
41
6.0
1.0
6.0
1.0
0.1
100
83
8
100
4.0
50
41
8.0
1.0
6.0
1.0
0.1
100
83
8
100
5.0
45
41
6.0
1.0
6.0
1.0
0.1
100
83
8
100
4.0
50
41
8.0
1.0
6.0
1.0
0.1
100
83
8
100
5.0
45
41
6.0
1.0
6.0
1.0
0.1
100
83
10
100
4.0
50
41
8.0
1.0
6.0
1.0
0.1
100
83
10
100
5.0
45
41
6.0
1.0
6.0
1.0
0.1
100
83
10
100
4.0
50
41
8.0
1.0
6.0
1.0
0.1
100
83
10
100
5.0
45
41
6.0
1.0
6.0
1.0
0.1
100
83
8
100
4.0
50
41
8.0
1.0
6.0
1.0
0.1
100
83
8
100
5.0
45
41
6.0
1.0
6.0
1.0
0.1
100
83
8
100
4.0
50
41
8.0
1.0
6.0
1.0
0.1
100
83
8
100
5.0
45
41
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