參數(shù)資料
型號(hào): S1010FS21
元件分類: 晶閘管
英文描述: 10 A, 100 V, SCR, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁(yè)數(shù): 3/12頁(yè)
文件大?。?/td> 188K
代理商: S1010FS21
Sensitive SCRs
Teccor Electronics, Inc.
5-11
Sensitive SCRs
(972) 580-7777
Figure 5.15
Typical Turn-On Time vs Gate Trigger Current
Figure 5.16
Power Dissipation (Typical) vs RMS On-State Current
Figure 5.17
Power Dissipation (Typical) vs RMS On-State Current
Figure 5.18
Normalized DC Latching Current vs Case Temperature
Figure 5.19
Simple Test Circuit For Gate Trigger Voltage and Current
Measurement
Note:V1 — 0-10 volt DC meter
VGT — 0-1 volt DC meter
IG — 0-1mA DC millimeter
R1 — 1K potentiometer
To measure gate trigger voltage and current, raise gate voltage
(VGT) until meter reading V1 drops from 6 volts to 1 volt. Gate
trigger voltage is the reading on VGT just prior to V1 dropping.
Gate trigger current IGT can be computed from the relationship:
where IG is reading (in amps) on meter just prior to V1 dropping.
Note: IGT may turn out to be a negative quantity (trigger current
flows out from gate lead).
0.01
0.1
1
10
100
0.1
1.0
10
100
IGT = 50 A MAX
IGT = 200 A MAX
IGT = 500 A MAX
TC = 25C
IGT = 12 A MAX
DC Gate Trigger Current (IGT) - mA
Turn-On
Time
(t
gt
)-
s
01234
1.0
2.0
3.0
4.0
5.0
T106 & T107 DEVICES
0.8 AMP TO-92 DEVICES
1.5 AMP DEVICES
RMS On-State Current [IT(RMS)] - Amps
Average
On-State
Power
Dissipation
[P
D(AV)
]-
Watts
CURRENT WAVEFORM: Half Sine Wave
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180
02468
10
0
2
4
6
8
10
12
RMS On-State Current [IT(RMS)] - Amps
CURRENT WAVEFORM: Half Sine Wave
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180
Average
On-State
Power
Dissipation
[P
D(AV)
]-
Watts
6-10 AMP
TO-220 & TO-202 DEVICES
-65
-15
+25
+65
+110 +125
-40
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
Case Temperature (TC) - C
Ratio
of
I L
(
T
C
=
25
C)
See General Notes for specific device
operating temperature range.
V1
6 VDC
+
-
100
D.U.T.
Reset
Normally-closed
Pushbutton
1K
(1%)
IG
VGT
100
IGT
R1
IN4001
I
GT
I
G
V
GT
1000
-------------Amps
=
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