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參數資料
| 型號： | S-AU80 |
| 元件分類： | 放大器 |
| 英文描述： | RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | 5-14A, 5 PIN |
| 文件頁數： | 2/4頁 |
| 文件大小： | 108K |
| 代理商： | S-AU80 |
S-AU80
2000-05-08
2/4
Electrical Characteristics (Ta
==== 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Frequency range
frange
880
915
MHz
Leakage current
Ileak
VDD = 6.0, VGG = 0 V
500
A
Output power
Po
34.5
35.0
dBmW
Power gain
Gp
Pi = 0 dBmW, VDD = 3.6 V, VGG <
= 2.5 V
ZG = ZL = 50
34.5
35.0
dB
Total efficiency
(Note4)
Eff
Pi = 0 dBmW, VDD = 3.6 V, VGG <
= 2.5 V
Po = 34.5 dBmW, ZG = ZL = 50
37
43
%
Input VSWR
VSWR
3.0
Control current
Icont
0.5
1.0
mA
2nd harmonics
2
nd
HRM
45
35
dB
3rd harmonics
3
rd
HRM
Pi = 0 dBmW, VDD = 3.6 V, VGG <
= 2.5 V
Po = 34.5 dBmW, ZG = ZL = 50
50
40
dB
Low voltage power
Po-L
Pi = 0 dBmW, VDD = 3.2 V, VGG <
= 2.5 V
ZG = ZL = 50 , Tc = 85°C
33.5
34.0
dBmW
Isolation
Po-iso
Pi = 0 dBmW, VDD = 3.6 V, VGG = 0.3 V
ZG = ZL = 50
40
37
dBmW
f0
200 kHz
30
dB
AM-AM conversion
AMcon
Pi1 = 0 dBmW, Pi2 = 40 dBmW
Pin2 = Pi1 + 200 kHz, VDD = 3.6 V
Po = 7~34.5 dBmW (VGG = adjust)
ZG = ZL = 50
f0
+ 200 kHz
30
dB
Switching time
(Note5)
tr/tf
VDD = 3.6 V
Po = 0~34.5 dBmW (VGG = adjust)
Pi = 0 dBmW, ZG = ZL = 50
1.0
s
f0
+ 20 MHz
82
dBmW
Noise Power
NRB
f0
= 915 MHz, Pin = 0 dBmW
Po = 34.5 dBmW, RBW = 100 kHz
VDD = 3.6 V, VGG = adjust
f0
+ 10 MHz
78
dBmW
Load Mismatch
Pi = 0 dBmW, VDD = 3.2~4.3 V
Po <
= 34.5 dBmW (VGG = adjust), ZG = 50
VSWR LOAD 6:1 ALL PHASE
No degradation
Stability
Pi = 0 dBmW, VDD = 3.2~4.3 V
VGG = 0~2.5 V, ZG = 50
Po <
= 34.5 dBmW (@ZL = 50 )
VSWR LOAD 6:1 ALL PHASE
All spurious output
than 60 dB below
desired signal
Note4: Output power Po is defined at the root point of the module output pin Po.
The coefficient of output power loss in the P.C.B. output is showed as follows:
1/(S21)^2
= 1/(0.9809)^2 = 1.04
Note5: GSM pulse is applied to VGG (1/8 duty 575 s)
*: This transistor is the electrostatic sensitive device. Please handle with caution.
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