參數(shù)資料
型號(hào): S-8261ABRMD-G3R-T2
廠商: Seiko Instruments Inc.
英文描述: BATTERY PROTECTION IC FOR SINGLE-CELL PACK
中文描述: 電池保護(hù)IC單節(jié)包裝
文件頁(yè)數(shù): 16/36頁(yè)
文件大?。?/td> 706K
代理商: S-8261ABRMD-G3R-T2
BATTERY PROTECTION IC FOR SINGLE-CELL PACK
S-8261 Series
Rev.1.9
_00
Seiko Instruments Inc.
16
(6) Test Condition 6, Test Circuit 3
Internal Resistance between VM and VDD, Internal Resistance between VM and VSS
The resistance between VM and VDD (R
VMD
) is the internal resistance between VM and VDD under the set
conditions of V1
=
1.8 V and V2
=
0 V.
The resistance between VM and VSS (R
VMS
) is the internal resistance between VM and VDD under the set
conditions of V1
=
3.5 V and V2
=
1.0 V.
(7) Test Condition 7, Test Circuit 4
CO Pin Resistance “H”, CO Pin Resistance “L”
The CO pin resistance “H” (R
COH
) is the resistance t the CO pin under the set condition of V1
=
3.5 V, V2
=
0 V and V3
=
3.0 V.
The CO pin resistance “L” (R
COL
) is the resistance t the CO pin under the set condition of V1
=
4.5 V, V2
=
0 V
and V3
=
0.5 V.
(8) Test Condition 8, Test Circuit 4
DO Pin Resistance “H”, DO Pin Resistance “L”
The DO pin resistance “H” (R
DOH
) is the resistance t the DO pin under the set condition of V1
=
3.5 V, V2
=
0 V and V4
=
3.0 V.
The DO pin resistance “L” (R
DOL
) is the resistance t the DO pin under the set condition of V1
=
1.8 V, V2
=
0 V
and V4
=
0.5 V.
(9) Test Condition 9, Test Circuit 5
Overcharge Detection Delay Time, Overdischarge Detection Delay Time
The overcharge detection delay time (t
CU
) is the time needed for V
CO
to change from “H” to “L” just after the
voltage V1 momentarily increases (within 10
μ
s) from the overcharge detection voltage (V
CU
)
0.2 V to the
overcharge detection voltage (V
CU
)
+
0.2 V under the set condition of V2
=
0 V.
The overdischarge detection delay time (t
DL
) is the time needed for V
DO
to change from “H” to “L” just after the
voltage V1 momentarily decreases (within 10
μ
s) from the overdischarge detection voltage (V
DL
)
+
0.2 V to the
overdischarge detection voltage (V
DL
)
0.2 V under the set condition of V2
=
0 V.
(10) Test Condition 10, Test Circuit 5
Overcurrent 1 Detection Delay Time, Overcurrent 2 Detection Delay Time, Load Short-circuiting
Detection Delay Time, Abnormal Charge Current Detection Delay Time
The overcurrent 1 detection delay time (t
IOV1
) is the time needed for V
DO
to go “L” after the voltage V2
momentarily increases (within 10
μ
s) from 0 V to 0.35 V under the set condition of V1
=
3.5 V and V2
=
0 V.
The overcurrent 2 detection delay time (t
IOV2
) is the time needed for V
DO
to go “L” after the voltage V2
momentarily increases (within 10
μ
s) from 0 V to 0.7 V under the set condition of V1
=
3.5 V and V2
=
0 V.
The load short-circuiting detection delay time (t
SHORT
) is the time needed for V
DO
to go “L” after the voltage V2
momentarily increases (within 10
μ
s) from 0 V to 1.6 V under the set condition of V1
=
3.5 V and V2
=
0 V.
The abnormal charge current detection delay time is the time needed for V
CO
to go from “H” to “L” after the
voltage V2 momentarily decreases (within 10
μ
s) from 0 V to
1.1 V under the set condition of V1
=
3.5 V and
V2
=
0 V. The abnormal charge current detection delay time has the same value as the overcharge detection
delay time.
(11) Test Condition 11, Test Circuit 2 (Product with 0 V battery charge function)
0 V Battery Charge Starting Charger Voltage
The 0 V battery charge starting charger voltage (V
0CHA
) is defined as the voltage between VDD and VM at
which V
CO
goes “H” (V
VM
+
0.1 V or higher) when the voltage V2 is gradually decreased from the starting
condition of V1
=
V2
=
0 V.
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