參數資料
型號: S-8261ABHBD-G3H-TF
廠商: Seiko Instruments Inc.
英文描述: BATTERY PROTECTION IC FOR SINGLE-CELL PACK
中文描述: 電池保護IC單節(jié)包裝
文件頁數: 7/36頁
文件大?。?/td> 706K
代理商: S-8261ABHBD-G3H-TF
Rev.1.9
_00
BATTERY PROTECTION IC FOR SINGLE-CELL PACK
S-8261 Series
Seiko Instruments Inc.
7
Pin Configurations
Table 2
Pin No.
Symbol
Pin description
1
DO
FET gate control pin for discharge
(CMOS output)
Voltage detection pin between VM and VSS
(Overcurrent detection pin)
FET gate control pin for charge
(CMOS output)
Test pin for delay time measurement
Positive power input pin
Negative power input pin
2
VM
3
CO
4
5
6
DP
VDD
VSS
SOT-23-6
Top view
6
4
5
1
2 3
Figure 3
Table 3
Pin No.
Symbol
Pin description
1
CO
FET gate control pin for charge
(CMOS output)
Voltage detection pin between VM and VSS
(Overcurrent detection pin)
FET gate control pin for discharge
(CMOS output)
Negative power input pin
Test pin for delay time measurement
Positive power input pin
2
VM
3
DO
4
5
6
VSS
DP
VDD
6-Pin SNB(B)
Top view
6
5
4
1
2
3
4
5
6
3
2
1
Bottom view
*1
*1.
Connect the heatsink of back
side at shadowed area to the
board,
and
potential open or VDD.
However, do not use it
as
the function of electrode.
set
electric
Figure 4
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