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參數(shù)資料
| 型號： | S-8261AAZMD-G2Z-T2 |
| 廠商： | Seiko Instruments Inc. |
| 英文描述： | BATTERY PROTECTION IC FOR SINGLE-CELL PACK |
| 中文描述： | 電池保護(hù)IC單節(jié)包裝 |
| 文件頁數(shù)： | 24/36頁 |
| 文件大小： | 706K |
| 代理商： | S-8261AAZMD-G2Z-T2 |
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BATTERY PROTECTION IC FOR SINGLE-CELL PACK
S-8261 Series
Rev.1.9
_00
Battery Protection IC Connection Example
Seiko Instruments Inc.
24
EB
+
EB
S-8261 Series
470
VSS
Battery
DO
VDD
R2
2 k
C1
CO
VM
FET1
FET2
R1
0.1
μ
F
DP
Figure 11
Table 14 Constant for External Components
Symbol
Part
Purpose
Typ.
Min.
Max.
Remarks
FET1
MOS FET Discharge control
Threshold voltage
≤
Overdischarge detection voltage
*1
Gate to source withstanding voltage
≥
Charger voltage
*2
Threshold voltage
≤
Overdischarge detection voltage
*1
Gate to source withstanding voltage
≥
Charger voltage
*2
Resistance should be as small as possible to avoid
lowering of the overcharge detection accuracy caused
by VDD pin current.
*3
Install a capacitor of 0.022
μ
F or higher between VDD
and VSS.
*4
Select as large a resistance as large as possible to
prevent current when a charger is connected in
reverse.
*5
FET2
MOS FET Charge control
R1
Resistor
ESD protection,
For power fluctuation
470
300
1 k
C1
Capacitor For power fluctuation
0.1
μ
F 0.022
μ
F 1.0
μ
F
R2
Resistor
Protection for reverse
connection of a charger
2 k
300
4 k
*1.
If the threshold voltage of an FET is low, the FET may not cut the charging current.
If an FET with a threshold voltage equal to or higher than the overdischarge detection voltage is used,
discharging may be stoped before overdischarge is detected.
*2.
If the withstanding voltage between the gate and source is lower than the charger voltage, the FET may
be destroyed.
*3.
If R1 has a high resistance, the voltage between VDD and VSS may exceed the absolute maximum
rating when a charger is connected in reverse since the current flows from the charger to the IC. Insert a
resistor of 300
or higher to R1 for ESD protection.
*4.
If a capacitor of less than 0.022
μ
F is connected to C1, DO may oscillate when load short-circuiting is
detected. Be sure to connect a capacitor of 0.022
μ
F or higher to C1.
*5.
If R2 has a resistance higher than 4 k
, the charging current may not be cut when a high-voltage charger
is connected.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S-8261AAZMD-G2ZT2G | 功能描述:電池管理 Lithium-Ion battery protection (1 cell) RoHS:否 制造商:Texas Instruments 電池類型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel |
| S-8261ABAMD-G3A-T2 | 制造商:SII 制造商全稱:Seiko Instruments Inc 功能描述:BATTERY PROTECTION IC FOR SINGLE-CELL PACK |
| S-8261ABAMD-G3AT2G | 功能描述:電池管理 Lithium-Ion battery protection (1 cell) RoHS:否 制造商:Texas Instruments 電池類型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel |
| S-8261ABBMD-G3B-T2 | 制造商:SII 制造商全稱:Seiko Instruments Inc 功能描述:BATTERY PROTECTION IC FOR SINGLE-CELL PACK |
| S-8261ABBMD-G3BT2G | 功能描述:電池管理 BATT PROTECTION IC 1-CELL PACK RoHS:否 制造商:Texas Instruments 電池類型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel |
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