參數(shù)資料
型號: S-80913
廠商: Seiko Instruments Inc.
英文描述: 1.3 V±2.0% Bulit-In Delay Circuit High-Precision Voltage Detector(檢測范圍1.3 V±2.0%,內置延時電路高精度電壓檢測器)
中文描述: 1.3V的± 2.0%Bulit,在延遲電路高精度電壓檢測器(檢測范圍1.3V的± 2.0%,內置延時電路高精度電壓檢測器)
文件頁數(shù): 14/24頁
文件大?。?/td> 172K
代理商: S-80913
BUILT-IN DELAY DIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
S-809 Series
Seiko Instruments Inc.
13
[Cautions]
The open of C
D
terminal may cause double pulses shown in Figure 12 at release.
If the double pulses cause a trouble, attach 10pF or larger capacitor to the C
D
terminal.
Do not apply the voltage to the C
D
terminal.
Layout the print circuit board not to apply or flow out the current to/from the CD terminal. Doing not so may cause
inaccurate delay time..
Use an external capacitor, CD of which leakage current can be ignored for the built-in constant-current value. A
leakage current may cause an error of delay time. Also, a leakage current over the built-in constant-current causes
unrelease status.
3.
Other characteristics
(1)
Temperature characteristic of detection voltage
The temperature characteristics of the detection voltage are expressed by the oblique line parts in Figure 12.
(2) Temperature characteristics of release voltage
(3)
Temperature characteristics of hysteresis voltage
Samples of each temperature characteristics for (1) to (3) are shown in page 16 to page 17.
The temperature factor
of the release voltage is calculated by the temperature factor of the detection
voltage as follows:
Ta
+V
DET
40
25
+0.54mV/
°
C
V
DET
[V]
1.500
85
Ta[
°
C]
-0.54mV/
°
C
Figure 13
S-80915AXMP:
The temperature factor of the release voltage has a same sign characteristics as the temperature factor
of the detection voltage.
Ta
V
DET
×
~
+V
DET
V
DET
=
+V
DET
Ta
Figure 12
Time
The temperature characteristics of hysteresis voltage
is calculated as follows:
+V
DET
Ta
V
DET
Ta
=
V
HYS
V
DET
×
V
DET
Ta
+V
DE
Ta
-
V
DET
Ta
相關PDF資料
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S-80915 1.5 V±2.0% Bulit-In Delay Circuit High-Precision Voltage Detector(檢測范圍1.5 V±2.0%,內置延時電路高精度電壓檢測器)
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