參數(shù)資料
型號(hào): S-80837CNPF-B8WTFG
廠商: Seiko Instruments Inc.
英文描述: ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
中文描述: 超小型封裝高精度電壓檢測(cè)器
文件頁數(shù): 26/54頁
文件大?。?/td> 672K
代理商: S-80837CNPF-B8WTFG
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.3.2
_00
26
Seiko Instruments Inc.
3. S-80846KNUA-D2C-T2, S-80846KNY-x
Table 20
(Ta
=
25
°
C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
circuit
1
2
1
3
Detection voltage
*1
Hysteresis width
Current consumption
Operating voltage
Output current
V
DET
V
HYS
I
SS
V
DD
I
OUT
4.500
0.95
0.59
2.88
4.600
*2
0.05
0.9
1.36
4.98
4.700
0.10
2.7
10.0
V
μ
A
V
mA
V
DD
=
6.0 V
V
DD
=
1.2 V
V
DD
=
2.4 V
Output transistor,
Nch, V
DS
=
0.5 V
Output transistor,
Nch, V
DD
=
10.0 V, V
DS
=
10.0 V
Leakage current
I
LEAK
0.1
μ
A
Response time
Detection voltage
temperature
coefficient
*3
*1.
V
DET
: Actual detection voltage value
*2.
Specified detection voltage value (
V
DET(S)
)
*3.
The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.
[
Ta
Ta
*1.
Temperature change ratio of the detection voltage
*2.
Specified detection voltage
*3.
Detection voltage temperature coefficient
Precautions
t
PLH
60
μ
s
1
DET
DET
V
Ta
V
Ta
=
40°C to 85°C
±
100
±
350
ppm/°C
]
(
)
[ ]
V
[
]
1000
C
ppm/
V
V
Typ.
V
C
mV/
V
DET
DET
DET(S)
DET
÷
°
×
=
°
3
*
2
*
*1
Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in
electrostatic protection circuit.
In CMOS output products of the S-808xxC series, the through-type current flows at the detection and the
release. If the input impedance is high, oscillation may occur due to the voltage drop by the through-type
current during releasing.
In CMOS output products oscillation may occur when a pull-down resistor is used, and falling speed of the
power supply voltage (V
DD
) is slow near the detection voltage.
When designing for mass production using an application circuit described herein, the product deviation and
temperature characteristics should be taken into consideration. SII shall not bear any responsibility for the
products on the circuits described herein.
SII claims no responsibility for any and all disputes arising out of or in connection with any infringement of the
products including this IC upon patents owned by a third party.
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