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參數(shù)資料
| 型號： | S-80820 |
| 廠商： | Seiko Instruments Inc. |
| 英文描述： | 2.0 V±2.0% Super-Small Package High-Precision Voltage Detector(微型封裝，檢測范圍2.0 V±2.0%，高精度電壓檢測器) |
| 中文描述： | 2.0 V ± 2.0％，超小型封裝高精度電壓檢測器（微型封裝，檢測范圍2.0 V ± 2.0％，高精度電壓檢測器） |
| 文件頁數(shù)： | 30/36頁 |
| 文件大小： | 308K |
| 代理商： | S-80820 |
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SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808 Series
Seiko Instruments Inc.
29
3.
Change of detection voltage
In Nch open-drain output products of the S-808 Series, detection voltage can be changed using resistance dividers
or diodes as shown in Figures 27 and 28. In Figure 27, hysteresis width is also changed.
Remarks
In CMOS output products of the S-808 Series, through-type current flows when the device is detecting or releasing. If a high
impedance is connected to the input, oscillation may be caused due to the fall of the voltage by the through-type current when
lowering the voltage during releasing.
When designing for mass production using an application circuit described herein, take the product deviation and temperature
characteristic into consideration.
Seiko Instruments Inc. shall not bear any responsibility for the patents on the circuits described herein.
(Nch open-drain
products)
RA
OUT
V
IN
V
S
V
DD
Note1: If RA and RB are large, the hysteresis width may be
larger than the value given by the formula above due
to through-type current (which flows slightly in Nch
open-drain circuit).
Note2: RA should be 75k
or less for purpose of protection
against oscillation.
+
-
S-
808XXSN
Figure 27
R
(Nch open-drain
products)
V
f1
OUT
V
IN
V
S
V
DD
S-
808XXSN
V
f2
Detection voltage =
-V
DET
RA+RB
RB
Hysteresis width =
V
HYS
RA+RB
RB
Figure 28
Detection voltage =V
f1
+V
f2
+ (-V
DET
)
(RA
≤
75k
)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S-80821 | 2.1 V±2.0% Super-Small Package High-Precision Voltage Detector(微型封裝，檢測范圍2.1 V±2.0%，高精度電壓檢測器) |
| S-80822 | 2.2 V±2.0% Super-Small Package High-Precision Voltage Detector(微型封裝，檢測范圍2.2 V±2.0%，高精度電壓檢測器) |
| S-80823 | 2.3 V±2.0% Super-Small Package High-Precision Voltage Detector(微型封裝，檢測范圍2.3 V±2.0%，高精度電壓檢測器) |
| S-80824 | 2.4 V±2.0% Super-Small Package High-Precision Voltage Detector(微型封裝，檢測范圍2.4 V±2.0%，高精度電壓檢測器) |
| S-80825 | 2.5 V±2.0% Super-Small Package High-Precision Voltage Detector(微型封裝，檢測范圍2.5 V±2.0%，高精度電壓檢測器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S808200MG | 制造商:ROITHNER 制造商全稱:ROITHNER 功能描述:Infrared Laser Diode |
| S808200MNP | 制造商:ROITHNER 制造商全稱:ROITHNER 功能描述:Infrared Laser Diode |
| S-80820ALNP-EAH-T2 | 制造商:SII 制造商全稱:Seiko Instruments Inc 功能描述:LOW-VOLTAGE HIGH-PRECISION VOLTAGE DETECTOR |
| S-80820ANNP-EDH-T2 | 制造商:SII 制造商全稱:Seiko Instruments Inc 功能描述:LOW-VOLTAGE HIGH-PRECISION VOLTAGE DETECTOR |
| S-80820ANUP-EDH-T2 | 功能描述:電壓監(jiān)測器/監(jiān)控器 U 628-80820CNU 06/02 RoHS:否 制造商:Texas Instruments 監(jiān)測電壓數(shù):2 監(jiān)測電壓:Adjustable 輸出類型:Open Drain 欠電壓閾值: 過電壓閾值: 準確性:1 % 工作電源電壓:1.5 V to 6.5 V 工作電源電流:1.8 uA 最大工作溫度:+ 125 C 封裝 / 箱體:SON-6 安裝風(fēng)格:SMD/SMT |
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