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參數(shù)資料
| 型號： | S-29U194A |
| 廠商： | Seiko Instruments Inc. |
| 英文描述： | 1Kbit CMOS Serial EEPROM(1K位CMOS串行EEPROM) |
| 中文描述： | 1Kbit的CMOS串行EEPROM（每1000位的CMOS串行EEPROM的） |
| 文件頁數(shù)： | 17/41頁 |
| 文件大?。?/td> | 185K |
| 代理商： | S-29U194A |
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1
6
N
+
N
+
Drain electrode
Select gate electrode
Control gate electrode
Source electrode
CG
FG
Thin oxide film
UTO
GND
SG
N
+
P substrate
[Data rewrite]
Data rewrite refers to the injection or removal of electrons into or from the FG. In this process, electrons
pass through a thin oxide film (UTO). The oxide film inherently acts as an insulator, but in this case the
film conducts electricity (electrons are transferred).
[Data retention]
Data retention refers to the prevention of leakage of electrons stored in the FG. This must be assured
for at least 10 years.
To meet the above stated contradictory properties, high-quality thin oxide films (UTO) must be
manufactured. Such UTOs are very thin (on the order of 10 nm), and stably manufacturing them
requires a very difficult technique.
<Remarks>
FAQ No.: 12022
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| S-29U220A | 制造商:SII 制造商全稱:Seiko Instruments Inc 功能描述:CMOS SERIAL EEPROM |
| S-29U220ADFE | 制造商:SII 制造商全稱:Seiko Instruments Inc 功能描述:CMOS SERIAL EEPROM |
| S-29U220AFS | 制造商:SII 制造商全稱:Seiko Instruments Inc 功能描述:CMOS SERIAL EEPROM |
| S-29U221A | 制造商:SII 制造商全稱:Seiko Instruments Inc 功能描述:CMOS SERIAL EEPROM |
| S-29U221ADFE | 制造商:SII 制造商全稱:Seiko Instruments Inc 功能描述:CMOS SERIAL EEPROM |
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