參數(shù)資料
型號(hào): RX1214B80W
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN Microwave power transistor(NPN 微波功率晶體管)
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: METAL CERAMIC, SOT-439A, 3 PIN
文件頁(yè)數(shù): 3/12頁(yè)
文件大?。?/td> 87K
代理商: RX1214B80W
1997 Feb 14
3
Philips Semiconductors
Product specification
NPN microwave power transistors
RX1214B80W; RX1214B130Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Up to 0.2 mm from ceramic.
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
MAX.
UNIT
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
open emitter
open base
R
BE
= 0
open collector
t
p
150
μ
s;
δ ≤
5%
T
mb
< 75
°
C; t
p
150
μ
s;
δ ≤
5%
65
15
60
3
9
280
+200
200
235
V
V
V
V
A
W
°
C
°
C
°
C
t
10 s; note 1
Fig.2
Maximum power dissipation derating as a
function of mounting base temperature.
t
p
= 150
μ
s
; δ
= 5%; P
tot max
= 280 W.
handbook, halfpage
200
100
0
50
MGA256
50
Ptot
(W)
150
Tmb (
o
C)
250
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