參數(shù)資料
型號: RURP3060
廠商: HARRIS SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: 30A, 600V Ultrafast Diode(30A, 600V 超快二極管,用于開關(guān)電源)
中文描述: 30 A, 600 V, SILICON, RECTIFIER DIODE
文件頁數(shù): 2/3頁
文件大?。?/td> 39K
代理商: RURP3060
2
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST
CONDITION
MIN
TYP
MAX
UNITS
V
F
I
F
= 30A
-
-
1.5
V
I
F
= 30A, T
C
= 150
o
C
-
-
1.3
V
I
R
V
R
= 600V
-
-
250
μ
A
V
R
= 600V, T
C
= 150
o
C
-
-
1
mA
t
rr
I
F
= 1A, dI
F
/dt = 100A/
μ
s
-
-
55
ns
I
F
= 30A, dI
F
/dt = 100A/
μ
s
-
-
60
ns
t
a
I
F
= 30A, dI
F
/dt = 100A/
μ
s
-
30
-
ns
t
b
I
F
= 30A, dI
F
/dt = 100A/
μ
s
-
20
-
ns
R
θ
JC
-
-
1.2
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
μ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time at dI
F
/dt = 100A/
μ
s (See Figure 6), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current at dI
F
/dt = 100A/
μ
s (See Figure 6).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 6).
R
θ
JC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
V
F
, FORWARD VOLTAGE (V)
I
F
,
200
100
10
1
0
0.5
1
1.5
2.5
2
175
o
C
100
o
C
25
o
C
V
R
, REVERSE VOLTAGE (V)
R
,
μ
A
100
10
1
0
100
200
300
500
600
400
1000
0.1
0.01
175
o
C
25
o
C
100
o
C
RURP3060
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