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參數(shù)資料
| 型號： | RURP30120 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 30A, 1200V Ultrafast Diode |
| 中文描述： | 30 A, 1200 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 31K |
| 代理商： | RURP30120 |
2
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
V
F
I
F
= 30A
-
-
2.1
V
I
F
= 30A, T
C
= 150
o
C
-
-
1.9
V
I
R
V
R
= 1200V
-
-
250
μ
A
V
R
= 1200V, T
C
= 150
o
C
-
-
1
mA
t
rr
I
F
= 1A, dI
F
/dt = 100A/
μ
s
-
-
110
ns
I
F
= 30A, dI
F
/dt = 100A/
μ
s
-
-
150
ns
t
a
I
F
= 30A, dI
F
/dt = 100A/
μ
s
-
90
-
ns
t
b
I
F
= 30A, dI
F
/dt = 100A/
μ
s
-
45
-
ns
R
θ
JC
-
-
1.2
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
μ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 6), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 6).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 6).
R
θ
JC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
200
100
10
1
0.0
I
F
,
V
F
, FORWARD VOLTAGE (V)
0.5
1.0
1.5
2.0
2.5
3.0
175
o
C
100
o
C
25
o
C
3.5
500
100
10
1.0
0.01
0.001
0
I
R
,
μ
A
200
600
800
1000
V
R
, REVERSE VOLTAGE (V)
0.1
1200
175
o
C
100
o
C
25
o
C
RURP30120
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|---|---|
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