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參數(shù)資料
| 型號(hào)： | RT9186B-25GQV |
| 廠商： | Richtek Technology Corporation |
| 英文描述： | Low Profile 500mA LDO with Enable and Power Good/Reset |
| 中文描述： | 超薄500mA的低壓降穩(wěn)壓器的啟用和電源良好/復(fù)位 |
| 文件頁數(shù)： | 10/13頁 |
| 文件大?。?/td> | 220K |
| 代理商： | RT9186B-25GQV |
RT9186A/B
10
DS9186AB-10 August 2007
www.richtek.com
Reverse Current Path
The P-MOSFET pass element of RT9186 has an
inherendiode connected between the regulator input and
output as shown in Figure 3. The inherent diode will be
forward biased and conduct an unlimited current if V
OUT
is
sufficiently higher than V
IN
.
a Schottky diode is
recommended connecting parallel with the inherent diode
in the application where output voltage may be higher than
input voltage as shown in Figure 4. This Schottkly will
clamp the forward bias voltage to 0.3V and conduct the
possible current to protect the RT9186 from damage by
unlimited current.
VIN
VOUT
VIN
VOUT
Figure 3. Inherent Diode of P-MOSFET Pass Transistor
Figure 4. Schottkly Diode Parallel with The Ingerent Diode
Thermal Considerations
Thermal protection limits power dissipation in
RT9186A/B. When the operation junction temperature
exceeds 160
°
C, the OTP circuit starts the thermal
shutdown function and turns the pass element off. The
pass element turn on again after the junction temperature
cools by 30
°
C.
For continuous operation, do not exceed absolute
maximum operation junction temperature 125
°
C. The
power dissipation definition in device is :
P
D
= (V
IN
-V
OUT
) x I
OUT
+ V
IN
x I
Q
The maximum power dissipation depends on the thermal
resistance of IC package, PCB layout, the rate of
Figure 5
surroundings airflow and temperature difference between
junction to ambient. The maximum power dissipation can
be calculated by following formula :
P
D(MAX)
= ( T
J(MAX)
- T
A
) /
θ
JA
Where T
J(MAX)
is the maximum operation junction
temperature 125
°
C, T
A
is the ambient temperature and the
θ
JA
is the junction to ambient thermal resistance.
For recommended operating conditions specification of
RT9186A/B, where T
J(MAX)
is the maximum junction
temperature of the die (125
°
C) and T
A
is the maximum
ambient temperature. The junction to ambient thermal
resistance
θ
JA
is layout dependent. For VDFN-8L 3x3
package, the thermal resistance
θ
JA
is 105
°
C/W on the
standard JEDEC 51-3 single-layer 1S thermal test board
and 70
°
C/W on the standard JEDEC 51-7 4-layers 2S2P
thermal test board. The maximum power dissipation at
T
A
= 25
°
C can be calculated by following formula :
P
D(MAX)
= ( 125
°
C - 25
°
C ) / 105 = 0.952W for single-layer
1S board
P
D(MAX)
= ( 125
°
C - 25
°
C ) / 70 = 1.428W for 4-layers
2S2P board
The maximum power dissipation depends on operating
ambient temperature for fixed T
J(MAX)
and thermal
resistance
θ
JA
. For RT9186A/B packages, the Figure 5
of derating curves allows the designer to see the effect of
rising ambient temperature on the maximum power
allowed.
0
250
500
750
1000
1250
1500
0
25
50
75
100
125
Ambient Temperature (
°
C)
M
DFN-8L at 4-Layers PCB
MSOP-8 at 1-Layers PCB
DFN-8L at 1-Layers PCB
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