參數(shù)資料
型號: RT8800AGQV
廠商: Richtek Technology Corporation
英文描述: General Purpose 3-Phase PWM Controller for High-Density Power Supply
中文描述: 通用三相PWM控制器,用于高密度電源
文件頁數(shù): 14/21頁
文件大?。?/td> 493K
代理商: RT8800AGQV
RT8800A
14
DS8800A-04 August 2007
www.richtek.com
All brand name or trademark belong to their owner respectively
Rewriting Equation (3), we get
CSN
LX
LX_Valley
I
COMM
×
F
R
R
R
V
×
The technique mentioned
above
also provides output voltage
offset function specified by Intel
VRD10.x. The offset
voltage level is calculated as:
F
CSN
ADJ
OFFSET
V
V
R
R
=
Enough bias current is required for a Schottky to act like
a voltage source. Users should choose the appropriate
R
CS
based on the IV characteristic of the diode
(Figure 12)
I
Figure 12
V
Zone 1
Zone 2
IV Characteristic
According to Figure 12, the forward voltage of diode will
be different results from the different conduction current.
So when the characteristic of diode in the circuit you
design is in zone 1, this will result in Spec. mis-met. It is
because when the V
CORE
is changed during DVID, the
node V
CORE
- V
F
is also changed to produce the differential
conduction current of diode
Δ
I and the
Δ
I will result in
producing the differential forward voltage of diode
Δ
V
F
Referring to Equation (1). The
Δ
V
F
would get
Δ
I
X
. Then
the V
CORE
must be subtracted the extra voltage V
(EXT)
(
Δ
I
X
x R
ADJ
) during DVID. So you will get the
Δ
V
CORE
= V
(MAX)
- V
(MIN)
- V
(EXT)
during DVID tests. In order to reduce the
effect results from diode. The better choice is to decrease
the Rcs to increase the conduction current of diode I to
get better V characteristic of diode in Zone 2.
Over Voltage Protection (OVP)
The RT8800A continuously monitors voltage at FB pin.
OVP is triggered if FB voltage is 500mV higher than the
voltage at PI pin. RT8800A latches off and turns on lower
MOSFET to protect the load from damage upon on OVP
trip. It can only be reset by DVD and VDD pins.
Current Ratio Setting
Current ratio adjustment is possible as described below.
It is important for achieving thermal balance in practical
application where thermal conditions between phases are
not identical. Figure 13 shows the application circuit of
GM for current ratio requirement. According to Basic Circuit
Theory, if
LX
LX
I
PX
SX
PX
+
X
X
PX
SX
LX
X
R
R
R
R
V
then
C
)
//R
(R
R
L
×
×
=
×
=
With other phase kept unchanged, this phase would share
(R
PX
+R
SX
)/R
PX
times current than other phases. Figure 14
and 15 show different current ratio setting for the power
stage whe
n Phase 3 i
s programmed 2 times current than
other phases. Figure 16 and 17 compare the above current
ratio setting results.
Figure 13
(4)
T
T
L
X
R
LX
I
LX
+
V
OUT
R
SX
C
X
+ V
X
-
R
PX
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參數(shù)描述
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