參數(shù)資料
型號: RT8010A-25GQW
廠商: Richtek Technology Corporation
英文描述: 1.5MHz, 1A, High Efficiency PWM Step-Down DC/DC Converter
中文描述: 1.5MHz的,第1A,高效PWM降壓型DC / DC轉(zhuǎn)換器
文件頁數(shù): 12/15頁
文件大?。?/td> 409K
代理商: RT8010A-25GQW
RT8010/A
12
DS8010/A-02 March 2007
www.richtek.com
Checking Transient Response
The regulator loop response can be checked by looking
at the load transient response. Switching regulators take
several cycles to respond to a step in load current. When
a load step occurs, V
OUT
immediately shifts by an amount
equal to
Δ
I
LOAD
(ESR), where ESR is the effective series
resistance of C
OUT
.
Δ
I
LOAD
also begins to charge or
discharge C
OUT
generating a feedback error signal used
by the regulator to return V
OUT
to its steady-state value.
During this recovery time, V
OUT
can be monitored for
overshoot or ringing that would indicate a stability problem.
Layout Considerations
Follow the PCB layout guidelines for optimal performance
of RT8010/A.
`
For the main current paths as indicated in bold lines in
Figure 6, keep their traces short and wide.
`
Put the input capacitor as close as possible to the device
pins (VIN and GND).
`
LX node is with high frequency voltage swing and should
be kept small area. Keep analog components away from
LX node to prevent stray capacitive noise pick-up.
`
Connect feedback network behind the output capacitors.
Keep the loop area small. Place the feedback
components near the RT8010/A.
2. I
2
R losses are calculated from the resistances of the
internal switches, R
SW
and external inductor R
L
. In
continuous mode, the average output current flowing
through inductor L is
chopped
between the main switch
and the synchronous switch. Thus, the series resistance
looking into the LX pin is a function of both top and bottom
MOSFET R
DS(ON)
and the duty cycle (DC) as follows :
R
SW
= R
DS(ON)TOP
x DC + R
DS(ON)BOT
x (1
DC)
The R
DS(ON)
for both the top and bottom MOSFETs can be
obtained from the Typical Performance Characteristics
curves. Thus, to obtain I
2
R losses, simply add R
SW
to R
L
and multiply the result by the square of the average output
current.
Other losses including C
IN
and C
OUT
ESR dissipative
losses and inductor core losses generally account for less
than 2% of the total loss.
Thermal Considerations
The maximum power dissipation depends on the thermal
resistance of IC package, PCB layout, the rate of
surroundings airflow and temperature difference between
junction to ambient. The maximum power dissipation can
be calculated by following formula :
P
D(MAX)
= ( T
J(MAX)
- T
A
) /
θ
JA
Where T
J(MAX)
is the maximum operation junction
temperature, T
A
is the ambient temperature and the
θ
JA
is
the junction to ambient thermal resistance.
For recommended operating conditions specification of
RT8010/A DC/DC converter, where T
J(MAX)
is the maximum
junction temperature of the die and T
A
is the maximum
ambient temperature. The junction to ambient thermal
resistance
θ
JA
is layout dependent. For WDFN-6L 2x2
packages, the thermal resistance
θ
JA
is 165
°
C/W on the
standard JEDEC 51-7 four layers thermal test board.
The maximum power dissipation at T
A
= 25
°
C can be
calculated by following formula :
P
D(MAX)
= (125
°
C
25
°
C) / 165
°
C/W = 0.606W for
WDFN-6L 2x2 packages
The maximum power dissipation depends on operating
ambient temperature for fixed T
J(MAX)
and thermal
resistance
θ
JA
.
For RT8010/A packages, the Figure 5 of derating curves
allows the designer to see the effect of rising ambient
temperature on the maximum power allowed.
Figure 5. Derating Curves for RT8010/A Package
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
25
50
75
100
(
°
C)
125
Ambient Temperature
M
Four Layers PCB
WDFN-6L 2x2
WQFN-16L 3x3
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