
RT8005
4
DS8005-08 August 2007
www.richtek.com
Electrical Characteristics
(V
DD
= 3.3V, T
A
= 25
°
C, unless otherwise specified)
Parameter
Absolute Maximum Ratings
(Note 1)
l
Supply Voltage, PVDD and VDD
------------------------------------------------------------------------------
0.3V to 6V
l
EN, FB Voltage---------------------------------------------------------------------------------------------------
0.3V to V
DD
l
PGND to GND ----------------------------------------------------------------------------------------------------
0.3V to 0.3V
l
LX Voltage ---------------------------------------------------------------------------------------------------------
0.3V to (V
DD
+ 0.3V)
l
Power Dissipation, P
D
@ T
A
= 25
°
C
VDFN-10L 3x3 ----------------------------------------------------------------------------------------------------1.923W
l
Package Thermal Resistance (Note 4)
VDFN-10L 3x3,
θ
JA
-----------------------------------------------------------------------------------------------52
°
C/W
l
Junction Temperature -------------------------------------------------------------------------------------------150
°
C
l
Lead Temperature (Soldering, 10 sec.)----------------------------------------------------------------------260
°
C
l
Storage Temperature Range -----------------------------------------------------------------------------------
65
°
C to 150
°
C
l
ESD Susceptibility (Note 2)
HBM (Human Body Mode) -------------------------------------------------------------------------------------2kV
MM (Machine Mode) --------------------------------------------------------------------------------------------200V
Recommended Operating Conditions
(Note 3)
l
Supply Voltage, PVDD and VDD ------------------------------------------------------------------------------2.4V to 5.5V
l
Enable Input Voltage,
V
EN
-------------------------------------------------------------------------------------0V to V
DD
l
Ambient Temperature Range ----------------------------------------------------------------------------------
40
°
C to 85
°
C
l
Junction Temperature Range ----------------------------------------------------------------------------------
40
°
C to 125
°
C
Symbol
Test Conditions
Min
Typ
Max Units
Supply Current
Quiescent Current
I
Q
V
EN
= 3.3V, V
FB
= V
REF
+ 0.15V,
I
OUT
= 0mA
--
200
400
μ
A
Shutdown Current
I
SHDN
V
EN
= 0V
--
0.01
1
μ
A
Reference
Reference Voltage
V
REF
0.4925
0.5
0.5075
V
Oscillator
Switching Frequency Range
f
OSC
1.7
2.0
2.3
MHz
Maximum Duty Cycle
DC
V
PVDD
= V
OUT
100
--
--
%
Output Voltage
Line Regulation
V
DD
= 2.4V to 5.5V, I
LOAD
= 100mA
--
--
+1.5
%
Load Regulation
10mA < I
LOAD
< 600mA
--
--
+1.5
%
Power Switches
R
DS(ON)
of P-Channel MOSFET
R
P_FET
V
PVDD
= 3.3V, I
LX
= 300mA
V
PVDD
= 3.3V, I
LX
=
300mA
V
PVDD
= 3.3V, V
FB
= V
REF
- 0.15V
--
230
--
m
R
DS(ON)
of N-Channel MOSFET
Current Limit
R
N_FET
--
180
--
m
A
I
LIMIT
--
1.8
--
To be continued