
〈Transistor〉
RT1P441X SERIES
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
MAXIMUM RATING (Ta=25℃)
RATING
RT1P441M
-50
-10
-50
-100
-200
SYMBOL
PARAMETER
RT1P441T
RT1P441U
RT1P441C
RT1P441S
UNIT
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
C
Tj
Tstg
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
V
V
V
mA
mA
mW
℃
℃
125(※)
125
150
450
+125
+150
-55~+125
-55~+150
(※ ) package mounted on 9mm×19mm×1mm glass-epoxy substrate.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
LIMIT
TYP
-0.1
-2.3
-1.1
47
1.0
150
SYMBOL
PARAMETER
TEST CONDITION
MIN
-50
50
-0.8
33
0.9
MAX
UNIT
V
(BR)CEO
I
CBO
h
FE
V
CE(sat)
V
I(ON)
V
I(OFF)
R
1
R
2
/R
1
f
T
TYPICAL CHARACTERISTICS
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
I
C
=-100μA,R
BE
=∞
V
CB
=-50V,I
E
=0
V
CE
=-5V,I
C
=-5mA
I
C
=-10mA,I
B
=-0.5mA
V
CE
=-0.2V,I
C
=-5mA
V
CE
=-5V,I
C
=-100μA
V
CE
=-6V,I
E
=10mA
V
-0.1
-0.3
-5.0
61
1.1
μA
-
V
V
V
kΩ
MHz
ISAHAYA
ELECTRONICS
CORPORATION
Collector current-Input off voltage
-10
-100
-1000
C
-0
-0.4
-0.8
-1.2
-1.6
-2
Input off voltage?。郑桑ǎ希疲疲ǎ郑?/div>
DC forward current gain-Collector current
1
10
100
1000
-1
-10
-100
Collector current IC(mA)
Input on voltage-Collector current
-0.1
-1
-10
-1
-10
-100
Collector current?。桑茫ǎ恚粒?/div>
I
D
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