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參數(shù)資料
| 型號(hào)： | RT1P141C |
| 廠商： | ISAHAYA ELECTRONICS CORPORATION |
| 英文描述： | TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE |
| 中文描述： | 與電阻晶體管開(kāi)關(guān)的應(yīng)用硅npn型外延式 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大小： | 119K |
| 代理商： | RT1P141C |
〈Transistor〉
ＲＴ１Ｐ１４１Ｘ SERIES
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
MAXIMUM RATING (Ta=25℃)
RATING
RT1P141M
-50
-10
-50
-100
-200
SYMBOL
PARAMETER
RT1P141T
RT1P141U
RT1P141C
RT1P141S
UNIT
Ｖ
ＣＢＯ
Ｖ
ＥＢＯ
Ｖ
ＣＥＯ
Ｉ
Ｃ
Ｉ
ＣＭ
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector
dissipation(Ta=25℃)
Junction temperature
Storage temperature
V
V
V
mA
mA
Ｐ
Ｃ
125（※）
125
150
450
mW
Ｔｊ
+125
+150
℃
℃
Ｔｓｔｇ
-55～+125
-55～+150
ELECTRICAL CHARACTERISTICS (Ta=25℃)
（※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate.
LIMIT
TYP
-0.1
-1.5
-1.1
10
1.0
150
SYMBOL
PARAMETER
TEST CONDITION
MIN
-50
50
-0.8
7.0
0.9
MAX
UNIT
Ｖ
（ＢＲ）ＣＥＯ
Ｉ
ＣＢＯ
ｈ
ＦＥ
Ｖ
ＣＥ（ｓａｔ）
Ｖ
Ｉ（ＯＮ）
Ｖ
Ｉ（ＯＦＦ）
Ｒ
１
Ｒ
２
／Ｒ
１
ｆ
Ｔ
TYPICAL CHARACTERISTICS
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
I
C
=-100μA，R
BE
=∞
V
CB
=-50V，I
E
=0
V
CE
=-5V，I
C
=-10mA
I
C
=-10mA，I
B
=-0.5mA
V
CE
=-0.2V，I
C
=-5mA
V
CE
=-5V，I
C
=-100μA
V
CE
=-6V，I
E
=10mA
V
-0.1
-0.3
-3.0
13
1.1
μA
－
V
V
V
kΩ
MHz
ISAHAYA
ELECTRONICS
CORPORATION
Input On Voltage - Collector Current
-0.1
-1
-10
-1
-10
-100
Collector Current Ｉ Ｃ （ ｍＡ ）
I
（
Collector Current - Input Off Voltage
-10
-100
-1000
-0
-0.4
-0.8
-1.2
-1.6
-2
Input Off Voltage Ｖ Ｉ （ ＯＦ Ｆ ） （ Ｖ ）
C
DC Forward Gain - Collector Current
1
10
100
1000
-1
-10
-100
Collector Current Ｉ Ｃ （ ｍＡ ）
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RT1P141M | TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE |
| RT1P141S | TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE |
| RT1P141T | TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE |
| RT1P141U | TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE |
| RT1P141X | TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RT1P141C-X | 制造商:JVC Worldwide 功能描述:DIGI TRANSISTOR |
| RT1P141M | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE |
| RT1P141S | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE |
| RT1P141T | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE |
| RT1P141U | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE |
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