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參數(shù)資料
| 型號： | RT1N431S |
| 廠商： | ISAHAYA ELECTRONICS CORPORATION |
| 英文描述： | SENSOR CURRENT 20A 4V PCB L07P |
| 中文描述： | 與電阻晶體管開關(guān)的應(yīng)用硅npn型外延式 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 121K |
| 代理商： | RT1N431S |
〈Transistor〉
ＲＴ１Ｎ４３１Ｘ SERIES
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
MAXIMUM RATING (Ta=25℃)
RATING
RT1N431M
50
10
50
100
200
SYMBOL
PARAMETER
RT1N431T
RT1N431U
RT1N431C
RT1N431S
UNIT
Ｖ
ＣＢＯ
Ｖ
ＥＢＯ
Ｖ
ＣＥＯ
Ｉ
Ｃ
Ｉ
ＣＭ
Ｐ
Ｃ
Ｔｊ
Ｔｓｔｇ
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
V
V
V
mA
mA
mW
℃
℃
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
125
（※ ）
125
150
450
+125
+150
-55～+125
-55～+150
ELECTRICAL CHARACTERISTICS (Ta=25℃)
（※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate.
LIMIT
TYP
0.1
1.4
1.1
4.7
1.0
200
SYMBOL
PARAMETER
TEST CONDITION
MIN
50
20
0.8
3.3
0.8
MAX
UNIT
Ｖ
（ＢＲ）ＣＥＯ
Ｉ
ＣＢＯ
ｈ
ＦＥ
Ｖ
ＣＥ（ｓａｔ）
Ｖ
Ｉ（ＯＮ）
Ｖ
Ｉ（ＯＦＦ）
Ｒ
１
Ｒ
２
／Ｒ
１
ｆ
Ｔ
TYPICAL CHARACTERISTICS
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
I
C
=100μA，R
BE
=∞
V
CB
=50V，I
E
=0
V
CE
=5V，I
C
=10mA
I
C
=10mA，I
B
=0.5mA
V
CE
=0.2V，I
C
=5mA
V
CE
=5V，I
C
=100μA
V
CE
=6V，I
E
=-10mA
V
0.1
0.3
2.3
6.1
1.2
μA
－
V
V
V
kΩ
MHz
VS.COLLECTOR CURRENT
INPUT ON VOLTAGE
1
10
100
1
10
100
COLLECTOR CURRENT I
C
(mA)
I
I
(
V
CE
=0.2V
VS.INPUT OFF VOLTAGE
COLLECTOR CURRENT
10
100
1000
0.0
0.4
0.8
1.2
1.6
2.0
INPUT OFF VOLTAGE V
I(OFF)
(V)
C
Ｃ
（
V
CE
=5V
VS.COLLECTOR CURRENT
DC FORWARD CURRENT GAIN
10
100
1000
1
10
100
COLLECTOR CURRENT I
C
(mA)
D
F
V
CE
=5V
ISAHAYA
ELECTRONICS
CORPORATION
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RT1N431T | TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE |
| RT1P141C | TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE |
| RT1P141M | TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE |
| RT1P141S | TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE |
| RT1P141T | TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RT1P130C | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type |
| RT1P130M | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type |
| RT1P130S | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type |
| RT1P130U | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type |
| RT1P130X | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type |
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