參數(shù)資料
型號(hào): RS3GB
廠商: Diodes Inc.
英文描述: High Speed Switching Diodes; Package: PG-SOT23-3; Configuration: Single; V<sub>R</sub> (max): 80.0 V; I<sub>F</sub> (max): 250.0 mA; I<sub>R</sub> (max): 1,000.0 nA; t<sub>rr</sub> (max): 4.0 ns;
中文描述: 3.0A的表面貼裝超快速恢復(fù)整流
文件頁數(shù): 2/2頁
文件大小: 46K
代理商: RS3GB
D
S
15005 Rev. E-2
2 of 2
RS3A/B - RS3M/B
0
0.5
1.0
25
50
75
100
125
150
175
I
,
(
T , TERMINAL TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
1.5
2.0
2.5
3.0
0.01
0.1
1.0
10
0
0.4
0.8
1.2
1.6
T = 25°C
I Pulse Width: 300 μs
I
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
0
20
1
10
100
I
,
F
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Forward Surge Current Derating Curve
Single Half-Sine-Wave
(JEDEC Method)
40
60
80
100
50V DC
Approx
50
NI (Non-inductive)
10
NI
1.0
NI
Oscilloscope
(Note 1)
Pulse
Generator
(Note 2)
Device
Under
Test
t
rr
Set time base for 50/100 ns/cm
+0.5A
0A
-0.25A
-1.0A
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF.
2. Rise Time = 10ns max. Input Impedance = 50 .
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
(+)
(+)
(-)
(-)
0.1
1.0
10
100
1000
0
20
40
60
80
100
120
140
I
R
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
T = 125°C
T = 25°C
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