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參數(shù)資料
| 型號： | RP1-H-12V |
| 英文描述： | LOW PROFILE HIGH FREQUENCY RELAY |
| 中文描述： | 低收縮高頻繼電器 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 88K |
| 代理商： | RP1-H-12V |
93
LOW PROFILE HIGH
FREQUENCY RELAY
RP-RELAYS
1
Ex. RP
H
Contact arrangement
1:1 Form C
Note: Standard packing; Carton: 50 pcs. Case 1,000 pcs.
Nil: Standard PC board terminal
H: Self-clinching terminal
1.5, 3, 4.5, 5, 6, 9, 12, 24 V
Terminal shape
Coil voltage (DC)
3V
Arrangement
Contact material
Movable
Stationary
Nominal switch-
ing capacity
Isolation
Insertion loss
V.S.W.R.
Mechanical
(at 180 cpm)
Electrical
(at 20 cpm)
Initial contact resistance, max.
(By voltage drop 6 V DC 0.1 A)
Rating
High frequency
characteristics
(
Impedance 50
)
Expected life
(min. opera-
tions)
Contact
Coil (at 25
°
C,
68
°
F
)
Voltage type
1.5 to 12 V DC
24 V DC
Nominal operating power
140 mW
270 mW
1 Form C
Silver alloy
Gold-clad silver
50 m
0.1 A 30 V DC
Contact switching power: 1 W
(Max. 1.8 GHz); Contact carrying
power: 3 W (Max. 1.2 GHz)
1 W (Max. 1.8 GHz)
Min. 15 dB (at 1 GHz)
Min. 10 dB (at 1.8 GHz)
Max. 0.5 dB (at 1 GHz)
Max. 1 dB (at 1.8 GHz)
Max. 1.2 (at 1 GHz)
Max. 1.3 (at 1.8 GHz)
5
×
10
6
10
5
(0.1 A 30 V DC)
10
5
(1 W at 1.8 GHz;
V.S.W.R.: max. 1.3)
Max. operating speed (at rated load)
Initial insulation resistance*
1
Between open contacts
Between contacts and coil
Initial breakdown
voltage
*
2
Operate time*
3
(at nominal voltage)
Release time(without diode)*
3
(at nominal voltage)
Temperature rise
Shock resistance
Vibration
resistance
Unit weight
Remarks
* Specifications will vary with foreign standards certification ratings.
*
1
Measurement at same location as “Initial breakdown voltage” section
*
2
Detection current: 10mA
*
3
Excluding contact bounce time
*
4
Half-wave pulse of sine wave: 11ms, detection time: 10
μ
s
*
5
Half-wave pulse of sine wave: 6ms
*
6
Detection time: 10
μ
s
Approx. 1 g
.04 oz
Characteristics
20 cpm
Min. 1,000 M
at 500 V DC
750 Vrms for 1 min.
1,500 Vrms for 1 min.
Max. 3 ms
(Approx. 1.5 ms)
Max. 2 ms
(Approx. 1 ms)
Max. 50
°
Cwith nominal coil
voltage across coil and at
nominal switching capacity
Min. 500 m/s
2
{50 G}
Min. 1,000 m/s
2
{100 G}
10 to 55 Hz
at double amplitude of 3 mm
10 to 55 Hz
at double amplitude of 5 mm
Functional*
4
Destructive*
5
Functional*
6
Destructive
Conditions for operation,
transport and storage
(Not freezing and condensing
at low temperature)
Ambient temp.
Humidity
–40
°
C to 70
°
C
–40
°
F to 158
°
F
5 to 85% R.H.
.748
.157
.417
TYPICAL APPLICATIONS
Antenna switching of mobile phone
Switching signal of measuring equipment
ORDERING INFORMATION
High frequency relay with the low profile of 4 mm
.157 inch
Excellent high frequency characteristics
Isolation: Min. 10dB (at 1.8 GHz)
Insertion loss: Max. 1.0dB (at 1.8 GHz)
V.S.W.R.: Max. 1.3 (at 1.8 GHz)
High sensitivity in small size
Size: 10.6
×
9
×
4 mm
.417
×
.354
Nominal operating power: 140 mW
×
.157 inch
SPECIFICATIONS
mm
inch
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PDF描述 |
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| RP1-H-24V | LOW PROFILE HIGH FREQUENCY RELAY |
| RP1-H-3V | LOW PROFILE HIGH FREQUENCY RELAY |
| RP1-H-4.5V | LOW PROFILE HIGH FREQUENCY RELAY |
| RP1-H-5V | LOW PROFILE HIGH FREQUENCY RELAY |
| RP1-H-6V | LOW PROFILE HIGH FREQUENCY RELAY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RP1H24J | 制造商:Panasonic Electric Works 功能描述: |
| RP1-H-24V | 功能描述:高頻/射頻繼電器 RELAY HI FREQ 24VDC SELF-CLINCH RoHS:否 制造商:Omron Electronics 觸點(diǎn)形式:2 Form C (DPDT-BM) 觸點(diǎn)電流額定值: 線圈電壓:5 VDC 線圈類型:Non-Latching 頻率: 功耗:100 mW 端接類型:Solder Terminal 絕緣:20 dB to 30 dB at 1 GHz 介入損耗:0.2 dB at 1 GHz |
| RP1-H-3V | 功能描述:高頻/射頻繼電器 RELAY HI FREQ 3VDC SELF-CLINCH RoHS:否 制造商:Omron Electronics 觸點(diǎn)形式:2 Form C (DPDT-BM) 觸點(diǎn)電流額定值: 線圈電壓:5 VDC 線圈類型:Non-Latching 頻率: 功耗:100 mW 端接類型:Solder Terminal 絕緣:20 dB to 30 dB at 1 GHz 介入損耗:0.2 dB at 1 GHz |
| RP1-H-4.5V | 功能描述:高頻/射頻繼電器 Hgh Frequen 1 Form C 1.8GHz 50ohm 1.0dB RoHS:否 制造商:Omron Electronics 觸點(diǎn)形式:2 Form C (DPDT-BM) 觸點(diǎn)電流額定值: 線圈電壓:5 VDC 線圈類型:Non-Latching 頻率: 功耗:100 mW 端接類型:Solder Terminal 絕緣:20 dB to 30 dB at 1 GHz 介入損耗:0.2 dB at 1 GHz |
| RP1-H-5V | 功能描述:高頻/射頻繼電器 Hgh Frequen 1 Form C 1.8GHz 50ohm 1.0dB RoHS:否 制造商:Omron Electronics 觸點(diǎn)形式:2 Form C (DPDT-BM) 觸點(diǎn)電流額定值: 線圈電壓:5 VDC 線圈類型:Non-Latching 頻率: 功耗:100 mW 端接類型:Solder Terminal 絕緣:20 dB to 30 dB at 1 GHz 介入損耗:0.2 dB at 1 GHz |
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