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參數(shù)資料
| 型號(hào)： | RN2511 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
| 中文描述： | 東芝晶體硅外延式進(jìn)步黨（厘進(jìn)程） |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 172K |
| 代理商： | RN2511 |
RN2510,RN2511
2001-06-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2510,RN2511
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Including twodevices in SMV (super mini type with 5 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1510, RN1511
Equivalent Circuit
Maximum Ratings
(Ta = 25 C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
*
300
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
55~150
C
* :
Total rating
Equivalent Circuit
(Top View)
JEDEC
EIAJ
TOSHIBA
Weight: 0.014g
―
―
2-3L1A
Unit: mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RN2603 | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| RN2604 | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| RN2605 | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| RN2606 | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| RN2601 | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
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參數(shù)描述 |
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