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參數(shù)資料
| 型號： | RN2206 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| 中文描述： | 開關(guān)，逆變電路，接口電路及驅(qū)動電路應(yīng)用 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 260K |
| 代理商： | RN2206 |
RN2201~RN2206
2001-06-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2201,RN2202,RN2203
RN2204,RN2205,RN2206
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1201~RN1206
Equivalent Circuit and Bias Resistor Values
Maximum Ratings
(Ta = 25 C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
RN2201~2206
V
CEO
50
V
RN2201~2204
10
Emitter-base voltage
RN2205, 2206
V
EBO
5
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
300
mW
Junction temperature
T
j
150
C
Storage temperature range
RN2201~2206
T
stg
55~150
C
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
―
―
2-4E1A
Unit: mm
Type No.
R1 (k
)
R2 (k
)
RN2201
4.7
4.7
RN2202
10
10
RN2203
22
22
RN2204
47
47
RN2205
2.2
47
RN2206
4.7
47
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RN2208 | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
| RN2207 | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
| RN2303 | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
| RN2301 | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
| RN2302 | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RN2206(F) | 制造商:Toshiba 功能描述:PNP 50V 100mA Bulk |
| RN2207 | 制造商:Toshiba America Electronic Components 功能描述: |
| RN2207(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans Digital BJT PNP 50V 100mA 3-Pin Mini |
| RN2207-TPE4 | 制造商:Toshiba America Electronic Components 功能描述: |
| RN2208 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
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