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參數(shù)資料
| 型號(hào)： | RN1109 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| 中文描述： | 開(kāi)關(guān)，逆變電路，接口電路及驅(qū)動(dòng)電路應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 175K |
| 代理商： | RN1109 |
RN1107~1109
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1107,RN1108,RN1109
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
With built-in bias resistors.
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2107~2109
Equivalent Circuit and Bias Resistor Values
Maximum Ratings
(Ta = 25 C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
RN1107~1109
V
CBO
50
V
Collector-emitter voltage
RN1107~1109
V
CEO
50
V
RN1107
6
RN1108
7
Emitter-base voltage
RN1109
V
EBO
15
V
Collector current
RN1107~1109
I
c
100
mA
Collector power dissipation
RN1107~1109
P
c
100
mW
Junction temperature
RN1107~1109
T
j
150
C
Storage temperature range
RN1107~1109
T
stg
55~150
C
JEDEC
EIAJ
TOSHIBA
Weight: 2.4mg
―
―
2-2H1A
Unit: mm
Type No.
R1 (k
)
R2 (k
)
RN1107
10
47
RN1108
22
47
RN1109
47
22
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RN1109ACT | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| RN1109ACT(TPL3) | 制造商:Toshiba America Electronic Components 功能描述:TRAN NPN CST3 50V 100A |
| RN1109CT | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications |
| RN1109CT(TPL3) | 制造商:Toshiba America Electronic Components 功能描述:TRAN NPN CST3 20V 50A |
| RN1109F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416 |
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