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參數(shù)資料
| 型號(hào)： | RMPA2455 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 衰減器 |
| 英文描述： | 2.4-2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier |
| 中文描述： | 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, 0.90 MM HEIGHT, ROHS COMPLIANT, LEADLESS PACKAGE-16 |
| 文件頁(yè)數(shù)： | 9/10頁(yè) |
| 文件大?。?/td> | 596K |
| 代理商： | RMPA2455 |
9
www.fairchildsemi.com
RMPA2455 Rev. F
R
Applications Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Precautions to Avoid Permanent Device Damage:
Cleanliness: Observe proper handling procedures to ensure
clean devices and PCBs. Devices should remain in their
original packaging until component placement to ensure no
contamination or damage to RF, DC and ground contact
areas.
Device Cleaning: Standard board cleaning techniques should
not present device problems provided that the boards are
properly dried to remove solvents or water residues.
Static Sensitivity: Follow ESD precautions to protect against
ESD damage:
– A properly grounded static-dissipative surface on which to
place devices.
– Static-dissipative floor or mat.
– A properly grounded conductive wrist strap for each person
to wear while handling devices.
General Handling: Handle the package on the top with a
vacuum collet or along the edges with a sharp pair of bent
tweezers. Avoiding damaging the RF, DC, and ground
contacts on the package bottom. Do not apply excessive
pressure to the top of the lid.
Device Storage: Devices are supplied in heat-sealed,
moisture-barrier bags. In this condition, devices are protected
and require no special storage conditions. Once the sealed
bag has been opened, devices should be stored in a dry
nitrogen environment.
Device Usage:
Fairchild recommends the following procedures prior to
assembly.
Assemble the devices within one year of removal from the dry
pack.
During the one year period, the devices must be stored in an
environment of less than 60% relative humidity and a
maximum temperature of 30°C
If the one year period or the environmental conditions have
been exceeded, then the dry-bake procedure, at 125°C for 24
hours minimum, must be performed.
Solder Materials & Temperature Profile:
Reflow soldering is the preferred method of SMT attachment.
Hand soldering is not recommended.
Reflow Profile
Ramp-up: During this stage the solvents are evaporated from
the solder paste. Care should be taken to prevent rapid
oxidation (or paste slump) and solder bursts caused by violent
solvent out-gassing. A maximum heating rate is 3°C/sec.
Pre-heat/soak: The soak temperature stage serves two
purposes; the flux is activated and the board and devices
achieve a uniform temperature. The recommended soak
condition is: 60-180 seconds at 150-200°C.
Reflow Zone: If the temperature is too high, then devices may
be damaged by mechanical stress due to thermal mismatch or
there may be problems due to excessive solder oxidation.
Excessive time at temperature can enhance the formation of
inter-metallic compounds at the lead/board interface and may
lead to early mechanical failure of the joint. Reflow must occur
prior to the flux being completely driven off. The duration of
peak reflow temperature should not exceed 20 seconds.
Soldering temperatures should be in the range 255–260°C,
with a maximum limit of 260°C.
Cooling Zone: Steep thermal gradients may give rise to
excessive thermal shock. However, rapid cooling promotes a
finer grain structure and a more crack-resistant solder joint.
The illustration below indicates the recommended soldering
profile.
Solder Joint Characteristics:
Proper operation of this device depends on a reliable void-free
attachment of the heat sink to the PWB. The solder joint should
be 95% void-free and be a consistent thickness.
Rework Considerations:
Rework of a device attached to a board is limited to reflow of the
solder with a heat gun. The device should be subjected to no
more than 15°C above the solder melting temperature for no
more than 5 seconds. No more than 2 rework operations should
be performed.
Recommended Solder Reflow Profile
150
Ramp-Up Rate
3
°
C/sec max
25
T
°
C
Time 25
°
C/sec to peak temp
6 minutes max
Ramp-Down Rate
6
°
C/sec max
Preheat, 150 to 200
°
C
60 - 180 sec
200
217
Time above
liquidus temp
60 - 150 sec
100
260
Peak temp
260 +0/-5
°
C
10 - 20 sec
Time (Sec)
Ramp-Up Rate
3
°
C/sec max
50
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| RMPA2456 | 2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier |
| RMPA2458 | 2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier |
| RMPA2550 | 2.4-2.5 GHz and 5.15-5.85 GHz Dual Band InGaP HBT Linear Power Amplifier |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RMPA2456 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RMPA2458 | 功能描述:射頻放大器 2.4-2.5 GHZ INGAP HBT LINEAR P RoHS:否 制造商:Skyworks Solutions, Inc. 類(lèi)型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類(lèi)型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| RMPA2458_059 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier |
| RMPA2550 | 功能描述:射頻放大器 WSC FG RoHS:否 制造商:Skyworks Solutions, Inc. 類(lèi)型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類(lèi)型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| RMPA2550-252 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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