參數(shù)資料
型號: RMPA2265
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 衰減器
英文描述: Dual Band WCDMA Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz
中文描述: 1850 MHz - 1910 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
封裝: 3 X 3 MM, 1 MM HEIGHT, LEAD FREE, LCC-8
文件頁數(shù): 1/11頁
文件大?。?/td> 484K
代理商: RMPA2265
2004 Fairchild Semiconductor Corporation
December 2004
RMPA2265 Rev.
E
R
2265
RMPA2265
Dual Band WCDMA Power Amplifier Module
1850 to 1910 MHz and 1920 to 1980 MHz
General Description
The RMPA2265 power amplifier module (PAM) is designed
for WCDMA applications in both the 1850–1910 and 1920–
1980 MHz bands. The 2 stage PAM is internally matched to
50
to minimize the use of external components and
features a low-power mode to reduce standby current and
DC power consumption during peak phone usage. High
power-added efficiency and excellent linearity are achieved
using Fairchild’s InGaP/GaAs Heterojunction Bipolar
Transistor (HBT) process.
Features
Single positive-supply operation and low power and
shutdown modes
42% WCDMA efficiency at +28 dBm average output
power 1920–1980 MHz
39% WCDMA efficiency at 27.5 dBm average output
power 1850–1910 MHz
Meets UMTS/WCDMA performance requirements in
both UMTS bands
Compact, low-profile package–(3.0 x 3.0 x 1.0 mm
nominal)
Internally matched to 50
output
and DC blocked RF input/
Functional Block Diagram
Device (3 x 3 x 1mm)
PA MODULE
(paddle ground on package bottom)
4
3
2
1
8
7
6
5
DC Bias Control
Input
Match
Output
Match
Vcc2
RF OUT
GND
Vref
RF IN
Vcc1
MMIC
(Top View)
Vmode
GND
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