參數(shù)資料
型號(hào): RMM2080
廠商: RAYTHEON SEMICONDUCTOR
元件分類: 衰減器
英文描述: 2-18 GHz Wideband Variable-Gain Driver Amplifier
中文描述: 2000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
文件頁(yè)數(shù): 4/5頁(yè)
文件大?。?/td> 201K
代理商: RMM2080
2004 Fairchild Semiconductor Corporation
RMM2080 Rev. C
R
Performance Data
The above data is derived from fixtured measurements which include 3 parallel, 1 mil diameter, 15 mil long, gold bond wires
connected to the RF input and output.
The Id @ 1dB compression increases to approximately 0.45 A. The dc supply should be able to support the required current
to achieve the above performance.
-5
0
5
10
15
20
25
30
0.00
5.00
10.00
15.00
20.00
25.00
30.00
35.00
1.5
1
0.5
0
-0.5
-1
-1.5
-2
Vcontrol (V)
2GHz
10GHz
18GHz
P1
Gain
10
12
14
16
18
20
22
24
26
28
30
35
30
25
20
15
10
5
R
G
G
P
Frequency (GHz)
Input & Output Return Loss
Vd=7.0V, Id=0.3A, GC1,2=1.5V
Small Signal Gain
Vd=7.0V, Id=0.3A, GC1,2=1.5V
Gain & Pout vs, Control Voltage
Vd=7.0V, Id=0.3A @ GC1,2=1.5V
0
0
2
4
6
8
12
10
14
16
18
20
Frequency (GHz)
0
2
4
6
8
12
10
14
16
18
20
S22
S11
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