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參數(shù)資料
| 型號： | RMBA09501A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 衰減器 |
| 英文描述： | Cellular 2 Watt Linear GaAs MMIC Power Amplifier |
| 中文描述： | 869 MHz - 894 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC, SMD, 12 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 89K |
| 代理商： | RMBA09501A |
2003 Fairchild Semiconductor Corporation
RMBA09501A Rev. C
R
Electrical Characteristics
2
Notes:
2. V
3. 9 Channel Forward Link QPSK Source; 1.23Mbps modulation rate. CDMA ACPR1 is measured using the ratio of the average power within the 1.23MHz channel
at band center to the average power within a 30KHz bandwidth at an 885KHz offset. Minimum CDMA output power is met with ACPR1 > 36dBc.
4. OIP3 specifications are achieved for power output levels of 27 and 30 dBm per tone with tone spacing of 1.25MHz at bandcenter.
4. VG1 and VG2 must be individually adjusted to achieve IDQ1 and IDQ2. A single VGG bias supply adjusted to achieve IDQTOTAL = 550mA can be used with
nearly equivalent performance. Values for IDQ1 and IDQ2 shown have been optimized for CDMA operation. IDQ1 and IDQ2 (or IDQTOTAL) can be adjusted to
optimize the linearity of the amplifier for other modulation systems.
= 7.0V, T
= 25°C. Part mounted on evaluation board with input and output matching to 50
.
The device requires external input and output matching to 50
as shown in Figure 3 and the Parts List.
Parameter
Min
869
30
Typ
Max
894
Units
MHz
dB
Frequency Ranges
Gain (Small Signal)
Gain Variation:
Over Frequency Range
Over Temperature Range
Noise Figure
Output Power @ CDMA
OIP3
Idd @ 33dBm Pout – 7V
PAE @ 33dBm Pout
Input VSWR (50
Drain Voltage (V
Gate Voltages (VG
Quiescent Currents (IDQ1, IDQ2)
Thermal Resistance (Channel to Case) Rjc
35
±1.5
±2.5
6
dB
dB
dB
dBm
dBm
A
%
3
33
43
4
45
1.0
28.5
2:1
7.0
)
DD
)
V
V
1
, VG
2
)
5
-2
-0.25
5
150, 400
11
mA
°C/W
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