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參數(shù)資料
| 型號： | RM30DZ-2H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
| 中文描述： | 高壓中功率常規(guī)使用絕緣型 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 45K |
| 代理商： | RM30DZ-2H |
Feb.1999
2H
1600
1700
1280
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
MITSUBISHI DIODE MODULES
RM30DZ/CZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
24
1200
1350
960
Symbol
V
RRM
V
RSM
VR
(DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
Voltage class
Unit
A
A
A
A
2
s
Hz
°
C
°
C
V
N·m
kg·cm
N·m
kg·cm
g
Conditions
Single-phase, half-wave 180
°
conduction, T
C
=116
°
C
One half chcle at 60Hz, peak value
Value for one cycle of surge current
Charged part to case
Main terminal screw M5
Mounting screw M6
Typical value
Ratings
47
30
600
1.5
×
10
3
1000
–40~+150
–40~+125
2500
1.47~1.96
15~20
1.96~2.94
20~30
160
Symbol
IF
(RMS)
IF
(AV)
I
FSM
I
2t
f
T
j
T
stg
V
iso
—
—
Parameter
RMS forward current
Average forward current
Surge (non-repetitive) forward current
I
2t
for fusing
Maximum operating frequency
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Unit
mA
V
°
C/W
°
C/W
M
Limits
Symbol
I
RRM
V
FM
R
th (j-c)
R
th (c-f)
—
Parameter
Repetitive reverse current
Forward voltage
Thermal resistance
Contact thermal resistance
Insulation resistance
Test conditions
T
j
=150
°
C, V
RRM
applied
T
j
=25
°
C, I
FM
=90A, instantaneous meas.
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
—
—
—
10
Typ.
—
—
—
—
—
Max.
15
1.5
0.8
0.2
—
ELECTRICAL CHARACTERISTICS
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| RM30TB-H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER GENERAL USE INSULATED TYPE |
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