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參數資料
| 型號： | RK9410 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 7A條（?。﹟蘇 |
| 文件頁數： | 2/4頁 |
| 文件大?。?/td> | 41K |
| 代理商： | RK9410 |
RK9410
Transistors
z
Thermal resistance
(Ta=25
°
C)
Rth(ch-A)
62.5
C / W
Symbol
Limits
Unit
Parameter
Channel to Ambient
z
Electrical characteristics
(Ta=25
°
C)
Parameter
Gate-Source Leakage
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Pulsed
Test Conditions
V
GS
=0V
f=1MHz
V
DS
=10V
V
GS
=10V
I
D
=3.5A, V
DD
15V
R
L
=4.3
R
GS
=10
μ
A
pF
m
S
Unit
V
μ
A
V
pF
pF
ns
ns
ns
ns
nC
nC
I
D
=7A, V
GS
=10V
I
D
=7A, V
GS
=4.5V
I
D
=7A, V
GS
=4V
30
1.0
5
Min.
710
18
28
Typ.
400
200
12
43
48
30
5.2
3.3
33
±10
1
2.5
23
37
43
Max.
I
D
=7A, V
DS
=10V
I
D
=1mA, V
GS
=0V
V
GS
=±20V, V
DS
=0V
V
DS
=30V, V
GS
=0V
V
DS
=10V, I
D
=1mA
nC
V
DD
=15V
V
GS
=10V
I
D
=7A
20.5
41
Static Drain-Source On-State
Resistance
I
GSS
I
DSS
l Y
fs
l
C
iss
Symbol
C
oss
C
rss
t
d (on)
t
r
t
f
Q
g
Q
gd
Q
gs
V
(BR) DSS
V
GS (th)
R
DS (on)
t
d (off)
z
Body diode characteristics (Source-Drain Characteristics)
(Ta=25
°
C)
Parameter
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Pulsed
Test Conditions
V
Unit
ns
nC
Min.
155
145
Typ.
1.5
Max.
I
DR
=5.2A, V
GS
=0V
I
s
=5.2A, V
GS
=0V
di/dt=100A/
μ
s
V
SD
t
rr
Q
rr
Symbol
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