參數(shù)資料
型號(hào): RK80530KZ012512
英文描述: Metal Film Resistor - RN 1/4 T1 110 1% A
中文描述: 微處理器| 32位|的CMOS |美巡賽| 370PIN |陶瓷
文件頁(yè)數(shù): 20/86頁(yè)
文件大?。?/td> 882K
代理商: RK80530KZ012512
20
Datasheet
Intel
Pentium
III Processor with 512KB L2 Cache at 1.13GHz to 1.40GHz
Intel requires that designs utilize VRM 8.5 and not VRM 8.4 specifications to meet the Intel
Pentium
III
processor with 512KB L2 Cache requirements
.
To re-emphasize, VRM 8.5 introduces two new signals [VID25mV and VTT_PWRGD] that is
utilized by the Intel Pentium
III
processor with 512KB L2 Cache and platform. Ignoring and
not connecting these two new pins, as documented in the Platform Design Guidelines, will prevent
the Intel Pentium
III
processor with 512KB L2 Cache from operating at the specified voltage
levels and core frequency.
Figure 6
provides a high-level interconnection schematic. Please refer
to the
VRM 8.5 DC-DC Converter Design Guideline
and the appropriate Platform Design
Guidelines for further detailed information on the voltage identification and bus select
implementation.
Refer to
Figure 14
for VID power-up sequence and timing requirements.
Note: Please refer to the
Intel Pentium
III
Processor with 512KB L2 Cache Dual Processor
Platform Design Guide
for VTT_PWRGD implementation for a Pentium
III
processor with
512KB L2 Cache platform.
Figure 6. V
TT
Power Good and Bus Select Interconnect Diagram
VRM 8.5
Voltage Regulator
Pentium III
processor with
512KB L2 Cache
Clock
Driver
Vtt
VTT_PWRGD
(output)
VTT_PWRGD
(input)
Vtt
1k
Vtt
VID[3:0,25mV]
Vcc_core
Vcc_core
BSEL [1:0]
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