參數(shù)資料
型號(hào)： RJK6014DPP-00-T2
廠商： Renesas Technology Corp.
英文描述： Silicon N Channel MOS FET High Speed Power Switching
中文描述： 硅?通道場(chǎng)效應(yīng)晶體管高速電源開關(guān)
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 79K
代理商： RJK6014DPP-00-T2
REJ03G1531-0100 Rev.1.00 Apr 17, 2007
Page 1 of 3
RJK6014DPP
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1531-0100
Rev.1.00
Apr 17, 2007
Features
Low on-resistance
Low leakage current
High speed switching
Outline
RENESAS Package code:
PRSS0003AB-A
(Package name:
TO-220FN)
1
23
D
S
G
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°
C/W
°
C
°
C
Item
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
I
DR (pulse)
I
AP
E
AR
Pch
Note2
θ
ch-c
Tch
Tstg
Ratings
600
±
30
16
32
16
32
4
0.87
35
3.57
150
–55 to +150
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value at Tc = 25
°
C
3. STch = 25
°
C, Tch
≤
150
°
C
4. Limited by maximum safe operation area
Note4
Note1
Note1
Note3
Note3
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