
1
RHRU50120
50A, 1200V Hyperfast Diode
The RHRU50120 (TA49100) are hyperfast diodes with soft
recovery characteristics (t
RR
< 85ns). They have half the
recovery time of ultrafast diodes and are silicon nitride passi-
vated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamp-
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc-
ing power loss in the switching transistors.
Ordering Information
Features
Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns
Operating Temperature . . . . . . . . . . . . . . . . . . . +175
o
C
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
Avalanche Energy Rated
Planar Construction
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
Package
SINGLE LEAD JEDEC STYLE TO-218
Symbol
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RHRU50120
TO-218
RHRU50120
NOTE: When ordering, use the entire part number.
CATHODE
(FLANGE)
ANODE
K
A
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
RHRU50120
1200
1200
1200
50
UNITS
V
V
V
A
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 50
o
C)
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
FSM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
100
A
500
A
150
50
W
mj
o
C
-65 to +175
April 1995
File Number
3946.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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