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參數(shù)資料
| 型號(hào)： | RHRU150120 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 150A, 1200V Hyperfast Diode |
| 中文描述： | 150 A, 1200 V, SILICON, RECTIFIER DIODE |
| 封裝： | TO-218, 1 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 68K |
| 代理商： | RHRU150120 |
3-112
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
V
F
I
F
= 150A
-
-
3.2
V
I
F
= 150A, T
C
= 150
o
C
-
-
2.6
V
I
R
V
R
= 1200V
-
-
250
μ
A
V
R
= 1200V, T
C
= 150
o
C
-
-
3.0
mA
t
rr
I
F
= 1A, dI
F
/dt = 200A/
μ
s
-
-
100
ns
I
F
= 150A, dI
F
/dt = 200A/
μ
s
-
-
125
ns
t
a
I
F
= 150A, dI
F
/dt = 200A/
μ
s
-
70
-
ns
t
b
I
F
= 150A, dI
F
/dt = 200A/
μ
s
-
40
-
ns
Q
RR
I
F
= 150A, dI
F
/dt = 200A/
μ
s
-
460
-
nC
C
J
V
R
= 10V, I
F
= 0A
-
420
-
pF
R
θ
JC
-
-
0.4
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
μ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
θ
JC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
V
F
, FORWARD VOLTAGE (V)
1
100
10
0
0.5
1
2
1.5
I
F
,
2.5
500
175
o
C
25
o
C
100
o
C
3
3.5
V
R
, REVERSE VOLTAGE (V)
0
1200
800
600
400
1000
1.0
0.1
10
100
2000
200
1000
I
R
,
μ
A
25
o
C
100
o
C
175
o
C
0.01
RHRU150120
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