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參數(shù)資料
| 型號： | RH40N25FSY3 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-channel 250V - 0.084ohm - TO-254AA Rad-hard low gate charge STripFET TM Power MOSFET |
| 中文描述： | N溝道250V - 0.084ohm -對254AA抗輻射低柵極電荷STripFET商標功率MOSFET |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 219K |
| 代理商： | RH40N25FSY3 |
Electrical characteristics
STRH40N25FSY3
6/13
Table 9.
Single event effect, SOA
(1)
1.
Rad-Hard Power MOSFETs have been characterized in heavy ion environment for single event effect
(SEE). Single event effect characterization is illustrated
Ion
Let (Mev/(mg/cm2))
Energy (MeV)
Range (μm)
V
DS
(V) @V
GS
0V
Kr
34
316
43
250
Xe
55.9
459
43
244
Table 10.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
I
SD
I
SDM (1)
V
SD (2)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
36
144
A
A
2.
Pulsed: pulse duration = 300μs, duty cycle 1.5%
Forward on voltage
I
SD
= 40A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 40A, di/dt = 100A/μs
V
DD
= 50V, Tj = 150°C
484
8.4
35
ns
μC
A
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