參數(shù)資料
型號(hào): RG4C
廠商: SANKEN ELECTRIC CO LTD
元件分類: 參考電壓二極管
英文描述: 1000V,Ultra-Fast-Recovery Rectifier Diodes(1000V,超快恢復(fù)整流二極管)
中文描述: 1 A, 1000 V, SILICON, SIGNAL DIODE
封裝: AXIAL PACKAGE-2
文件頁(yè)數(shù): 1/1頁(yè)
文件大?。?/td> 21K
代理商: RG4C
1
5
50
10
20ms
I
F
RG 4Y
RG 4Z, RG 4, RG 4A
Ta—I
F(AV)
Derating
RG 4C
1
0.1
0.01
0.001
80
60
40
10
0
25
Ambient Temperature Ta (
°
C)
50
75
100
125
150
0
0.4
0.8
1.2
1.6
2.0
40
20
1
5
50
10
20ms
I
F
60
40
30
20
10
0
25
Ambient Temperature Ta (
°
C)
50
75
100
125
150
0
60
1
5
50
10
20ms
I
F
100
80
60
40
20
20
1
2
3
4
5
Wthou Heatsnk
20 201tCu
5mm
5mm
0
25
Ambient Temperature Ta (
°
C)
50
75
100
125
150
0
60
1
2
3
4
5
WthHeasnk
Without Heatsink
20 201tCu
5mm
5mm
20 201tCu
5mm
5mm
RG 4Z, RG 4
RG 4A
70
50
30
10
RG 4Z, RG 4
RG 4A
50
0.8
1.2
1.6
2.0
0.4
2.4
2.8
T
a
=
0.1
0.5
Forward Voltage V
F
(V)
0.7
0.9
1.1
1.3
1.5
1.7
0.3
T
a
=
100oC
60oC
25oC
0.6
1.0
1.4
1.8
0.2
2.2
T
a
=
100oC
60oC
25oC
1
0.1
0.01
0.001
10
30
1
0.1
0.01
0.001
6
5
±
1
1.4
±
0.1
6.5
±
0.2
Cathode Mark
8
±
0
V
=
V
RM
Ta
=
100
°
C max
Ultra-Fast-Recovery Rectifier Diodes
Parameter
Type No.
Absolute Maximum Ratings
I
FSM
I
F (AV)
(A)
Half-Single Shot
V
RM
(V)
V
F
(V)
I
F
(A)
I
/
I
RP
(mA)
I
/
I
RP
(mA)
V
R
=
V
RM
max
I
(mA)
I
(H)
(mA)
Tj
(
°
C)
Tstg
(
°
C)
max
Electrical Characteristics (Ta
=
25
°
C)
(
°
C/W)
(g)
Mass
Others
RG 4Y
70
RG 4Z
200
RG 4
400
RG 4A
600
RG 4C
1000
2.0 (3.5)
100
1.3
1.7
1.8
2.0
3.0
3.5
1.0
1.0 (3.0)
80
3.0
1.0 (2.0)
50
2.0
0.5
60
5.0
2.5
100
100/100
100/200
500/500
500/1000
–40 to +150
50
8
1.2
A
47
Fig.
( ) is with
Heatsink
F
F
(
V
F
—I
F
Characteristics
(Typical)
Overcurrent Cycles
I
FMS
Rating
P
F
(
A
F
(
Ta—I
F(AV)
Derating
Forward Voltage V
F
(V)
F
F
(
V
F
—I
F
Characteristics
(Typical)
Overcurrent Cycles
I
FMS
Rating
P
F
(
A
F
(
Forward Voltage V
F
(V)
F
F
(
V
F
—I
F
Characteristics
(Typical)
Overcurrent Cycles
I
FMS
Rating
P
F
(
A
F
(
Ta—I
F(AV)
Derating
External Dimensions
(Unit: mm)
Flammability:
UL94V-0 or Equivalent
A
Fig.
t
(ns)
t
(ns)
Rth (j- )
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