- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374589 > RFP8P06E (INTERSIL CORP) 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs(8A, 60V, 0.300 Ω,P溝道功率MOS場效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號： | RFP8P06E |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs(8A, 60V, 0.300 Ω,P溝道功率MOS場效應(yīng)管) |
| 中文描述： | 8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 87K |
| 代理商： | RFP8P06E |
4-121
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE:
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Refer to Intersil Application Notes AN7254 and AN7260.
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
800
600
400
200
0
0
-5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-10
-15
-20
-25
C
1000
C
ISS
C
RSS
C
OSS
V
GS
= 0V, f = 1MHz
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
-60
-45
-30
-15
0
-10.0
-7.5
-5.0
-2.5
0.0
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
t, TIME (
μ
s)
V
DD
= BV
DSS
V
DD
= BV
DSS
R
L
= 1.2
I
G(REF)
= 1.45mA
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
V
D
,
V
G
,
V
GS
= -10V
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
DUT
t
P
-V
GS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
R
GS
R
L
DUT
-V
GS
0V
+
-
V
GS
V
DS
t
d(ON)
t
r
90%
10%
V
DS
90%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
10%
0
0
RFD8P06E, RFD8P06ESM, RFP8P06E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFD8P06E | 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs |
| RFD8P06ESM | 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs |
| RFD8P06LE | 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET |
| RFD8P06LESM | 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET |
| RFD8P06 | 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP8P06LE | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP8P08 | 制造商:Harris Corporation 功能描述:MOSFET Transistor, P-Channel, TO-220AB |
| RFP8P10 | 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFPA0133 | 制造商:RFMD 功能描述:AMP RF 380-960MHZ 3-5V 16QFN 制造商:RF Micro Devices Inc 功能描述:AMP, RF, 380-960MHZ, 3-5V, 16QFN |
| RFPA0133TR7 | 制造商:RF Micro Devices Inc 功能描述:IC PROG PWR AMP 16-QFN |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。