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參數(shù)資料
| 型號： | RFP6P10 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | -6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 6 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 310K |
| 代理商： | RFP6P10 |
3
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
-8
-7
-6
-5
-4
-3
-2
-1
0
100
10
1
0.1
-1
-10
-100
-1000
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T
J
= MAX RATED
T
C
= 25
C
V
DS(MAX)
= -100V
RFP8P10
V
DS(MAX)
= -80V
RFP8P08
I
D
MAX CONTINUOUS
OPERATION IN THIS AREA
LIMITED BY r
DS(ON)
DC
30
20
10
0
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
I
D
,
6
25
15
5
0
1
3
5
7
V
GS
= -6V
V
GS
= -5V
V
GS
= -7V
V
GS
= -8V
PULSE DURATION = 80
μ
s
T
C
= 25
C
V
GS
= -10V
8
9
10
V
GS
= -9V
V
GS
= -20V
V
GS
= -4V
I
D
,
8
6
0
-4
-6
-8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
-10
-2
14
4
2
12
T
C
= -40
o
C
T
C
= 25
o
C
T
C
= 125
o
C
V
DS
= 10V
PULSE DURATION = 80
μ
s
0
16
r
D
,
I
D
, DRAIN CURRENT (A)
0.3
0.2
0.1
0
0
2
8
12
20
O
4
6
10
14
V
GS
= 10V
PULSE DURATION = 80
μ
s
18
16
25
o
C
-40
o
C
125
o
C
0.4
0.5
0.6
0.7
0.8
RFP6P08, RFP6P10
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP70N03 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP70N03R4349 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFP70N06 | 功能描述:MOSFET N-Ch Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP70N06 | 制造商:Intersil Corporation 功能描述:MOSFET N TO-220 |
| RFP70N06 | 制造商:Fairchild Semiconductor Corporation 功能描述:PWR MOS 60V/70A/0.014 OHM N-CH TO-220AB |
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