參數(shù)資料
型號(hào)： RFP6P10
廠商： Electronic Theatre Controls, Inc.
英文描述： P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS
中文描述： P通道增強(qiáng)型功率場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 310K
代理商： RFP6P10
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFP6P08
80
80
RFP6P10
100
100
UNITS
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 (for TO-220AB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
6
6
A
A
V
W
20
±
20
60
0.48
20
±
20
60
0.48
W/
o
C
o
C
-55 to 150
-55 to 150
300
260
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFP6P08
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
-80
-
-
V
RFP6P10
-100
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 7)
-2
-
-4
V
Zero-Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
V
DS
= 0.8 x Rated BV
DSS
(T
C
= 125
o
C)
-
-
1
μ
A
-
-
25
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V, V
DS
= 0V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 6A, V
GS
= -10V (Figures 5, 6)
-
-
0.6
Drain to Source On Voltage (Note 2)
V
DS(ON)
I
D
= 6A, V
GS
= -10V
V
DD
= 50V, I
D
≈
6A
R
G
= 50
, R
L
= 16
V
GS
= -10V
(Figures 13, 14)
-
-
-3.6
V
Turn-On Delay Time
t
d(ON)
-
11
60
ns
Rise Time
t
r
-
48
100
ns
Turn-Off Delay Time
t
d(OFF)
-
102
150
ns
Fall Time
t
f
-
70
100
ns
Input Capacitance
C
ISS
V
DS
= 25V
V
GS
= 0V
f = 1MHz
(Figure 8)
-
-
800
pF
Output Capacitance
C
OSS
-
-
350
pF
Reverse-Transfer Capacitance
C
RSS
-
-
150
pF
Thermal Resistance Junction to Case
R
θ
JC
RFP6P08, RFP6P10
-
-
2.083
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= -3A
-
-
-1.4
V
Reverse Recovery Time
t
rr
I
SD
= 4A, dl
SD
/dt = 50A/
μ
s
-
150
-
ns
NOTES:
2. Pulse Test: Pulse Duration
≤
300
μ
s max, Duty Cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
RFP6P08, RFP6P10
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