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參數(shù)資料
| 型號： | RFP6P08 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | -6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 6 A, 80 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 310K |
| 代理商： | RFP6P08 |
4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Applications Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 12. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
(Continued)
2
1
-50
0
T
J
, JUNCTION TEMPERATURE (
o
C)
50
100
150
V
GS
= -10V
I
D
= 6A
N
3
O
200
0
1.5
1
-50
0
T
J
, JUNCTION TEMPERATURE (
o
C)
50
100
0.5
150
V
GS
= -10V
I
D
= 250
μ
A
200
N
0
T
0
-10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-20
-30
-40
-50
C
600
500
200
300
0
700
400
100
800
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
V
DD
= BV
DSS
V
DD
= BV
DSS
BV
DSS
I
G
(REF)
I
G
(ACT)
20
80
DRAIN TO SOURCE
VOLTAGE
I
G
(REF)
I
G
(ACT)
V
D
,
t, TIME (ms)
V
G
,
100
75
50
25
0
10
8
6
4
0
2
GATE
TO
SOURCE
VOLTAGE
R
L
= 16.67
I
G
(REF) = 0.46mA
V
GS
= -10V
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
t
P
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
GS
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
RFP6P08, RFP6P10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFP6P08 | P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS |
| RFP6P10 | P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS |
| RFP6P10 | -6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs |
| RFP8P05 | 8A, 50V, 0.300 Ohm,N-Channel PowerMOSFET(8A, 50V, 0.300 Ohm,N溝道增強型功率MOS場效應(yīng)管) |
| RFD8P05 | 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP6P10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFP70N03 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP70N03R4349 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFP70N06 | 功能描述:MOSFET N-Ch Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP70N06 | 制造商:Intersil Corporation 功能描述:MOSFET N TO-220 |
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