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參數(shù)資料
| 型號(hào)： | RFP60P03 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 60 A, 30 V, 0.027 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | RFP60P03 |
4-144
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORM
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
C
ISS
C
OSS
C
RSS
4000
3000
2000
1000
0
0
-5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-10
-15
-20
-25
C
5000
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
-30
-22.5
-15
-7.5
0
-10
-7.5
-5.0
-2.5
0
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
t, TIME (
μ
s)
V
DD
= BV
DSS
V
DD
= BV
DSS
R
L
= 0.5
I
G(REF)
= -3mA
V
GS
= -10V
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
V
D
,
V
G
,
t
P
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
GS
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
d(ON)
t
r
90%
10%
V
DS
90%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
t
ON
10%
0
RFG60P03, RFP60P03, RF1S60P03SM
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| RFG60P03 | 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs(60A, 30V, 0.027 Ω,P溝道功率MOS場(chǎng)效應(yīng)管) |
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| RF1S640 | 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs |
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