參數(shù)資料
型號: RFP50N06
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs
中文描述: 50 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 4/6頁
文件大?。?/td> 47K
代理商: RFP50N06
4-465
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs. JUNCTION TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260
FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
N
T
J,
JUNCTION TEMPERATURE (C
o
)
1.5
1
0.5
0
-50
50
150
O
2
2.5
0
100
V
GS
= 10V, I
D
= 50A
200
3
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
N
T
J,
JUNCTION TEMPERATURE (C
o
)
1.2
0.8
0.4
0
-50
50
150
T1.8
0
100
V
GS
= V
DS
I
D
= 250
μ
A
200
2.0
N
T
J,
JUNCTION TEMPERATURE (C
o
)
1.2
0.8
0.4
0
-50
50
150
B 1.6
0
100
200
2.0
I
D
= 250
μ
A
2000
1000
1
25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
5000
0
3000
4000
5
C
ISS
C
OSS
C
RSS
10
15
20
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
50
37.5
25
12.5
0
10
8
6
4
0
2
GATE
SOURCE
VOLTAGE
I
G(REF)
I
G(ACT)
0.75BV
DSS
0.50BV
DSS
0.25 BV
DSS
V
DD
= BV
DSS
V
DD
= BV
DSS
R
L
= 1
I
G(REF)
= 1.5mA
V
GS
= 10V
V
G
,
V
D
,
t, TIME (
μ
s)
20
80
DRAIN SOURCE VOLTAGE
I
G(REF)
I
G(ACT)
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
RFG50N05, RFP50N05
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFP50N06 制造商:Intersil Corporation 功能描述:MOSFET N TO-220
RFP50N06_F102 制造商:Fairchild Semiconductor Corporation 功能描述:
RFP50N06_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
RFP50N06_Q 功能描述:MOSFET TO-220AB N-CH POWER RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFP50N06LE 制造商:Rochester Electronics LLC 功能描述:- Bulk