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參數(shù)資料
| 型號： | RFP50N05 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 50 A, 50 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 47K |
| 代理商： | RFP50N05 |
4-464
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 5. SATURATION CHARACTERISTICS
FIGURE 6. TRANSFER CHARACTERISTICS
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
P
0
0.2
0.4
0.6
0.8
1.0
1.2
10
0
50
100
T
C
, CASE TEMPERATURE (C
o
)
I
D
,
25
125
150
175
75
20
30
40
50
60
1
10
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
1
100
100
DC
T
j
= MAX RATED
T
C
= 25
o
C
OPERATION IN THIS AREA
MAY BE LIMITED BY r
DS(ON)
10
100
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
0.01
10
1000
If R = 0
tav = (L)(Ias)/(1.3 RATED BV
dss
- V
dd
)
If R
≠
0
tav = (L/R) In[(Ias x R)/(1.3 RATED BV
dss
- V
dd
) + 1]
Starting T
j
= 25
o
C
I
dm
Starting T
j
= 150
o
C
120
100
80
00
1
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
I
D
,
20
40
60
V
GS
= 4V
PULSE DURATION = 80
μ
s
DUTY CYCLE
=
0.5% MAX
T
C
= 25
C
V
GS
= 10V
V
GS
= 8V
V
GS
= 9V
V
GS
= 7V
V
GS
= 5V
V
GS
= 6V
I
D
,
100
20
0
2.5
5
7.5
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
40
0
80
60
-55
o
C
25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
120
175
o
C
RFG50N05, RFP50N05
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RFP50N05L | 功能描述:MOSFET 50V/50a/0.022Ohm NCh Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP50N05L_04 | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFP50N05L_Q | 功能描述:MOSFET 50V/50a/0.022Ohm NCh Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP50N06 | 功能描述:MOSFET TO-220AB N-CH POWER RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP50N06 | 制造商:Intersil Corporation 功能描述:MOSFET N TO-220 |
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