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參數(shù)資料
| 型號(hào)： | RFP4N06L |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 4 A, 60 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 35K |
| 代理商： | RFP4N06L |
6-277
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1.5
1.0
0.5
-50
0
50
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= 5V
I
D
= 4A
N
O
2.0
0
1.5
1.0
2.0
50
0
T
J
, JUNCTION TEMPERATURE (
o
C)
50
100
150
N
T
V
GS
= V
DS
I
D
= 250
μ
A
200
0
0.5
0
10
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
20
30
40
50
C
400
300
200
100
0
C
RSS
C
OSS
C
ISS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
60
45
30
15
0
10
8
6
4
0
2
GATE
SOURCE
VOLTAGE
I
G(REF)
I
G(ACT)
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
V
DD
= BV
DSS
V
DD
= BV
DSS
R
L
= 15
I
G(REF)
= 0.095mA
V
GS
= 5V
V
G
,
t, TIME (
μ
s)
20
80
DRAIN SOURCE
I
G(REF)
I
G(ACT)
VOLTAGE
V
D
,
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFP4N05L, RFP4N06L
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