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參數(shù)資料
| 型號： | RFP3N45 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 3 A, 450 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 81K |
| 代理商： | RFP3N45 |
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFM3N45
RFM3N50
RFP3N45
RFP3N50
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
450
500
450
500
V
450
500
450
500
V
3
3
3
3
A
5
5
5
5
A
±
20
±
20
±
20
±
20
V
75
75
60
60
W
0.6
0.6
0.48
0.48
W/
o
C
o
C
Operating and Storage Temperature . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
-55 to 150
-55 to 150
-55 to 150
-55 to 150
300
260
300
260
300
260
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFM3N45, RFP3N45
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
450
-
-
V
RFM3N50, RFP3N50
500
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A, (Figure 7)
2.0
-
4.0
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
-
-
1
μ
A
-
-
25
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V, V
DS
= 0V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 3A, V
GS
= 10V, (Figures 5, 6)
-
-
3
Drain to Source On Voltage (Note 2)
V
DS(ON)
I
D
= 3A, V
GS
= 10V
V
DD
=
250V, I
D
≈
1.5A, R
G
= 50
, V
GS
= 10V
R
L
= 165
(Figures 10, 11, 12)
-
-
9.0
V
Turn-On Delay Time
t
d(ON)
-
30
45
ns
Rise Time
t
r
-
40
60
ns
Turn-Off Delay Time
t
d(OFF)
-
90
135
ns
Fall Time
t
f
-
50
75
ns
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
-
-
750
pF
Output Capacitance
C
OSS
-
-
150
pF
Reverse Transfer Capacitance
C
RSS
-
-
100
pF
Thermal Resistance, Junction to Case
RFM3N45, RFM3N50
R
θ
JC
-
-
1.67
o
C/W
RFP3N45, RFP3N50
-
-
2.083
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 1.5A
-
-
1.4
V
Reverse Recovery Time
t
rr
I
SD
= 4A, dI
SD
/dt = 100A/
μ
s
-
800
-
ns
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
RFM3N45, RFM3N50, RFP3N45, RFP3N50
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