參數(shù)資料
型號(hào)： RFP3055LE
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs
中文描述： 12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 82K
代理商： RFP3055LE
4-436
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFD3055, RFD3055SM, RFP3055
60
60
±
20
12
Refer to Peak Current Curve
Refer to UIS Curve
53
0.357
-55 to 175
UNITS
V
V
V
A
A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20K
) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Single Pulse Avalanche Rating (Figures 14, 15) . . . . . . . . . . . . . . . . . . . . . . . . . . I
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
W
W/
o
C
o
C
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
V
DS
= Rated BV
DSS
, V
GS
= 0V
T
C
= 125
o
C, V
DS
= 0.8 x Rated BV
DSS
V
GS
=
±
20V
I
D
= 12A, V
GS
= 10V (Figure 9) (Note 2)
V
DD
= 30V, I
D
= 12A
R
L
= 2.5
, V
GS
= +10V
R
G
= 10
(Figure 13)
60
-
-
V
Gate Threshold Voltage
2
-
4
V
Zero Gate Voltage Drain Current
-
-
1
μ
A
-
-
25
μ
A
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(10)
Q
g(TH)
-
-
100
nA
Drain to Source On Resistance
-
-
0.150
Turn-On Time
-
-
40
ns
Turn-On Delay Time
-
7
-
ns
Rise Time
-
21
-
ns
Turn-Off Delay Time
-
16
-
ns
Fall Time
-
10
-
ns
Turn-Off Time
-
-
40
ns
Total Gate Charge
V
GS
= 0 to 20V
V
GS
= 0 to 10V
V
GS
= 0 to 2V
V
DD
= 48V,I
D
= 12A,
R
L
= 4
,
I
g(REF)
= 0.24mA
(Figure 13)
-
19
23
nC
Gate Charge at 10V
-
10
12
nC
Threshold Gate Charge
-
0.6
0.8
nC
Input Capacitance
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DS
= 25V, V
GS
= 0V,
f = 1MHz (Figure 12)
-
300
-
pF
Output Capacitance
-
100
-
pF
Reverse Transfer Capacitance
-
30
-
pF
Thermal Resistance Junction to Case
-
-
2.8
o
C/W
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
TO-251 and TO-252
-
-
100
TO-220
-
-
62.5
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
t
rr
I
SD
= 12A
I
SD
= 12A, dI
SD
/dt = 100A/
μ
s
-
-
1.5
V
Reverse Recovery Time
-
-
100
ns
NOTES:
2. Pulse Test: Pulse Width
≤
300ms, Duty Cycle
≤
2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
RFD3055, RFD3055SM, RFP3055
相關(guān)PDF資料
PDF描述
RFD3055LE 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs
RFD3055LESM 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs
RFD3055SM 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
RFD3055LESM9A TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 11A I(D) | TO-252AA
RFD3055 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFP3055LE 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC TO-220
RFP3055LE_Q 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFP3055LES2357 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFP3055RLE 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-220AB
RFP3055RLEP2 制造商:Harris Corporation 功能描述:
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