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參數(shù)資料
| 型號： | RFP2P10 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | -2A, -80V and -100V, 3.500 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 2 A, 100 V, 3.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 39K |
| 代理商： | RFP2P10 |
3
Typical Performance Curves
Unless otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
T
C,
CASE TEMPERATURE (
o
C)
1.2
P
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
2.5
1.5
1.0
0.5
2.0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
1
0.10
0.01
1
10
100
1000
OPERATION IN THIS AREA
MAY BE LIMITED BY r
DS(ON)
T
J
= MAX RATED
T
C
= 25
o
C
3
2
1
0
-2
-3
-4
-5
I
D
D
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -6V
V
GS
= -5V
4
-1
V
GS
= -7V
V
GS
= -8V
V
GS
= -10V
V
GS
= -20V
V
GS
= -4V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= 25
C
V
DS
= -15V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
I
D
D
2.5
1.5
0.5
0
-2
V
GS,
GATE TO SOURCE VOLTAGE (V)
-4
-6
-8
-10
2
1
-40
o
C
25
o
C
0
3
3.5
125
o
C
125
o
C
25
o
C
-40
o
C
V
GS
= -10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
r
D
D
I
D,
DRAIN CURRENT (A)
4
3
2
1
0
0
1
2
3
4
5
R
)
RFP2P08, RFP2P10
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|---|---|
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