參數(shù)資料
型號： RFP15P05
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs
中文描述： 15 A, 50 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 2/5頁
文件大小： 36K
代理商： RFP15P05
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFP15N15
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150
V
150
V
15
40
A
A
±
20
V
75
0.6
W
W/
o
C
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
-55 to 150
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
150
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
1
μ
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
25
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V, V
DS
= 0V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 15A, V
GS
= 10V (Figures 6, 7)
-
-
0.150
Drain to Source On Voltage (Note 2)
V
DS(ON)
I
D
GS
= 10V
-
-
2.25
V
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 9)
-
-
1700
pF
Output Capacitance
C
OSS
-
-
750
pF
Reverse-Transfer Capacitance
C
RSS
-
-
350
pF
Turn-On Delay Time
t
d(ON)
V
DD
= 75V, I
D
≈
7.5A, R
G
= 50
,
V
GS
= 10V
R
L
= 9.9
,
(Figures 10, 11, 12)
-
50
75
ns
Rise Time
t
r
-
150
225
ns
Turn-Off Delay Time
t
d(OFF)
-
185
280
ns
Fall Time
t
f
-
125
190
ns
Thermal Resistance Junction-to-Case
-
-
1.67
o
C/W
Source to Drain Diode Specifications
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 7.5A
-
-
1.4
V
Reverse Recovery Time
t
rr
I
SD
= 4A, dI
SD
/dt = 100A/
μ
s
-
200
-
ns
NOTES:
2. Pulse test: width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
RFP15N15
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